Vishay Intertechnology, Inc. MOSFET Si4434ADY-T1-GE3

N-Channel 250 V MOSFET in an SO-8 package, designed for DC/DC and boost converters, load switching, and LED backlighting. It has a maximum drain-source on-state resistance of 0.150 Ω at 10 V gate-source voltage and 0.170 Ω at 7.5 V, with a continuous drain current of 4.1 A at 25 °C and 2.8 A at 150 °C junction temperature. The device supports a pulsed drain current of 25 A, single pulse avalanche energy of 7.2 mJ, and operates from -55 °C to 150 °C. Thermal resistance is 36 °C/W junction-to-ambient for transient conditions and 16 °C/W junction-to-foot. The part is lead-free, halogen-free, and meets RoHS compliance.