Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4429EDY-T1-E3 SI4429EDY-T1-E3

Description
Manufacturer: Vishay Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1092852-SI4429EDY-T1 -E3 Mounting: SMD (SMT) Power Dissipation: 1.5 W Rise Time: 19 ns Fall Time: 19 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: SO Popularity: Low Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C RoHS: Compliant Min Operating Temperature: -55 °C Element Configuration: Single Continuous Drain Current (ID): 13 A Drain to Source Breakdown Voltage: 30 V Turn-Off Delay Time: 54 ns Drain to Source Resistance: 10.5 mΩ Gate to Source Voltage (Vgs): 12 V
Request a Quote
Description
Manufacturer: Vishay Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1092852-SI4429EDY-T1 -E3 Mounting: SMD (SMT) Power Dissipation: 1.5 W Rise Time: 19 ns Fall Time: 19 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: SO Popularity: Low Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C RoHS: Compliant Min Operating Temperature: -55 °C Element Configuration: Single Continuous Drain Current (ID): 13 A Drain to Source Breakdown Voltage: 30 V Turn-Off Delay Time: 54 ns Drain to Source Resistance: 10.5 mΩ Gate to Source Voltage (Vgs): 12 V
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4429EDY-T1-E3 - 1092852-SI4429EDY-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4429EDY-T1-E3
1092852-SI4429EDY-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4429EDY-T1-E3 1092852-SI4429EDY-T1-E3
Manufacturer: Vishay Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1092852-SI4429EDY-T1 -E3 Mounting: SMD (SMT) Power Dissipation: 1.5 W Rise Time: 19 ns Fall Time: 19 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: SO Popularity: Low Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C RoHS: Compliant Min Operating Temperature: -55 °C Element Configuration: Single Continuous Drain Current (ID): 13 A Drain to Source Breakdown Voltage: 30 V Turn-Off Delay Time: 54 ns Drain to Source Resistance: 10.5 mΩ Gate to Source Voltage (Vgs): 12 V

Manufacturer: Vishay
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1092852-SI4429EDY-T1-E3
Mounting: SMD (SMT)
Power Dissipation: 1.5 W
Rise Time: 19 ns
Fall Time: 19 ns
Categories: Transistors - FETs, MOSFETs - RF
Case / Package: SO
Popularity: Low
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 150 °C
RoHS: Compliant
Min Operating Temperature: -55 °C
Element Configuration: Single
Continuous Drain Current (ID): 13 A
Drain to Source Breakdown Voltage: 30 V
Turn-Off Delay Time: 54 ns
Drain to Source Resistance: 10.5 mΩ
Gate to Source Voltage (Vgs): 12 V

Buy Now

Technical Specifications

  Win Source Electronics
Product Category Transistors
Product Number 1092852-SI4429EDY-T1-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4429EDY-T1-E3
Package Type SOT3; SO
Unlock Full Specs
to access all available technical data

Similar Products

CSD25483F4 20V , P-Channel FemtoFET?MOSFET - CSD25483F4 - Texas Instruments
Specs
Transistor Type MOSFET
Polarity P-Channel
Package Type LGA0.6x1.0
View Details
7 suppliers
TRANSISTORS - Transistors (BJT) - Single - 2SA1626-AZ - 855051-2SA1626-AZ - Win Source Electronics
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details