Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4410BDY SI4410BDY

Description
Manufacturer: Vishay Win Source Part Number: 093020-SI4410BDY Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.4W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 7.5A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 20nC @ 5V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 13.5 mOhm @ 10A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Vishay Win Source Part Number: 093020-SI4410BDY Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.4W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 7.5A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 20nC @ 5V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 13.5 mOhm @ 10A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4410BDY - 093020-SI4410BDY - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4410BDY
093020-SI4410BDY
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4410BDY 093020-SI4410BDY
Manufacturer: Vishay Win Source Part Number: 093020-SI4410BDY Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.4W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 7.5A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 20nC @ 5V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 13.5 mOhm @ 10A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 093020-SI4410BDY
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.4W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 7.5A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 20nC @ 5V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 13.5 mOhm @ 10A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Singapore
N-Channel 7.5A 30V MOSFET Transistor
285-SI4410BDY
N-Channel 7.5A 30V MOSFET Transistor 285-SI4410BDY
Small Signal Field-Effect Transistor, 7.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Product overview: SI4410BDY from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 7.5A, 30V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 7.5A, 30V, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-SI4410BDY can be used for catalog matching and distributor lookup.

Small Signal Field-Effect Transistor, 7.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Product overview: SI4410BDY from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 7.5A, 30V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 7.5A, 30V, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-SI4410BDY can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD.
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 093020-SI4410BDY 285-SI4410BDY
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4410BDY N-Channel 7.5A 30V MOSFET Transistor
Polarity N-Channel; N-Channel
V(BR)DSS 30 volts
PD 1400 milliwatts 1400 milliwatts
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