Manufacturer: Vishay
Win Source Part Number: 064481-SI4214DDY-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 3.1W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 8.5A
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 22nC @ 10V
Max Input Capacitance: 660pF @ 15V
Maximum Rds On at Id,Vgs: 19.5 mOhm @ 8A, 10V
Alternative Parts (Cross-Reference): AO4854; Si4214DDY-T1-GE3; Si4214DDY;
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Limited
Small Signal Field-Effect Transistor, 8.5A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 Product overview: SI4214DDY-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 8.5A, 30V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 8.5A, 30V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SI4214DDY-T1-E3
Mosfet Array 2 N-Channel (Dual) 30V 8.5A 3.1W Surface Mount 8-SOIC
MOSFET 2N-CH 30V 8.5A 8SOIC
MOSFET 2N-CH 30V 8.5A 8SOIC
MOSFET 2N-CH 30V 8.5A 8SOIC
MOSFET 2N-CH 30V 8.5A 8SO
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 064481-SI4214DDY-T1-E3 | 2088-SI4214DDY-T1-E3 | 742-SI4214DDY-T1-E3TR-ND | SI4214DDY-T1-E3 | 880-SI4214DDY-T1-E3 | SI4214DDY-T1-E3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4214DDY-T1-E3 | N-Channel 8.5A 30V MOSFET Transistor | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET 2N-CH 30V 8.5A 8SO | MOSFET |
| Polarity | N-Channel | |||||
| V(BR)DSS | 30 volts | |||||
| PD | 3100 milliwatts | 3100 milliwatts | 3100 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |
