N-Channel 20V 35.8A (Tc) 3W (Ta), 6W (Tc) Surface Mount 8-SOIC
N-Channel 20V 35.8A (Tc) 3W (Ta), 6W (Tc) Surface Mount 8-SOIC
N-Channel 20V 35.8A (Tc) 3W (Ta), 6W (Tc) Surface Mount 8-SOIC
Manufacturer: Vishay
Win Source Part Number: 1249010-SI4186DY-T1-
Manufacturer Homepage: www.vishay.com
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Limited
MOSFET N-CH 20V 35.8A 8SO
Trans MOSFET N-CH 20V 35.8A 8-Pin SOIC N T/R Product overview: SI4186DY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 35.8A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 35.8A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4186DY-T1-GE3 can be used for catalog matching and distributor lookup.
MOSFET N-CH 20V 35.8A 8SO
N CHANNEL MOSFET, 35.8V, 35.8A; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:35.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.4V RoHS Compliant: Yes
N CHANNEL MOSFET, 35.8V, 35.8A; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:35.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.4V RoHS Compliant: Yes
| DigiKey | Win Source Electronics | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI4186DY-T1-GE3CT-ND | 1249010-SI4186DY-T1-GE3 | SI4186DY-T1-GE3 | 278-SI4186DY-T1-GE3 | SI4186DY-T1-GE3 | SI4186DY-T1-GE3 | 35R0075 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4186DY-T1-GE3 | Single FETs, MOSFETs | 20V 35.8A SOIC MOSFET Transistor | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | N Channel Mosfet, 35.8V, 35.8A; Channel Type Vishay |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| Package Type | "8-SOIC (0.154"", 3.90mm Width)" | SOT3 | 8-SOIC (0.154", 3.90mm Width) | Tape and Reel | 90 nC @ 10 V | TO-3 | |
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 20 volts | 20 volts | |||||
| IDSS | 35800 milliamps | 35800 milliamps |
