MOSFET N-CH 20V 35.8A 8SO
Manufacturer: Vishay
Win Source Part Number: 1249010-SI4186DY-T1-
Manufacturer Homepage: www.vishay.com
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Limited
Trans MOSFET N-CH 20V 35.8A 8-Pin SOIC N T/R Product overview: SI4186DY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 35.8A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 35.8A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4186DY-T1-GE3 can be used for catalog matching and distributor lookup.
N-Channel 20V 35.8A (Tc) 3W (Ta), 6W (Tc) Surface Mount 8-SOIC
N-Channel 20V 35.8A (Tc) 3W (Ta), 6W (Tc) Surface Mount 8-SOIC
N-Channel 20V 35.8A (Tc) 3W (Ta), 6W (Tc) Surface Mount 8-SOIC
N CHANNEL MOSFET, 35.8V, 35.8A; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:35.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.4V RoHS Compliant: Yes
N CHANNEL MOSFET, 35.8V, 35.8A; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:35.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.4V RoHS Compliant: Yes
MOSFET N-CH 20V 35.8A 8SO
| ODG (Origin Data Global) | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI4186DY-T1-GE3 | 1249010-SI4186DY-T1-GE3 | 278-SI4186DY-T1-GE3 | SI4186DY-T1-GE3CT-ND | 35R0075 | SI4186DY-T1-GE3 | SI4186DY-T1-GE3 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4186DY-T1-GE3 | 20V 35.8A SOIC MOSFET Transistor | Single FETs, MOSFETs | N Channel Mosfet, 35.8V, 35.8A; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 20 volts | 20 volts | |||||
| IDSS | 35800 milliamps | 35800 milliamps | |||||
| PD | 3000 milliwatts | 6 milliwatts |
