Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3585DV-T1-GE3 SI3585DV-T1-GE3

Manufacturer: Vishay
Win Source Part Number: 138614-SI3585DV-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-TSOP
Maximum Power Dissipation: 830mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 2A, 1.5A
Gate-Source Threshold Voltage: 600mV @ 250μA (Min)
Max Gate Charge: 3.2nC @ 4.5V
Maximum Rds On at Id,Vgs: 125 mOhm @ 2.4A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Limited

MOSFET N/P-CH 20V 2A/1.5A 6TSOP Product overview: SI3585DV-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 2A, 1.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 2A, 1.5A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-SI3585DV-T1-GE3 can be used for catalog matching and distributor lookup.