P-Channel 12V 5.9A (Ta) 1.1W (Ta) Surface Mount 6-TSOP
MOSFET P-CH 12V 5.9A 6TSOP
Manufacturer: Vishay
Win Source Part Number: 028437-SI3473DV-T1-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.1W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-TSOP
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 5.9A (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 33nC @ 4.5V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 23 mOhm @ 7.9A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Balance
MOSFET P-CH 12V 5.9A 6TSOP
MOSFET P-CH 12V 5.9A 6-TSOP
| DigiKey | ODG (Origin Data Global) | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | |
|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI3473DV-T1-E3TR-ND | SI3473DV-T1-E3 | 028437-SI3473DV-T1-E3 | SI3473DV-T1-E3 | 880-SI3473DV-T1-E3 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3473DV-T1-E3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET P-CH 12V 5.9A 6-TSOP |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel; P-Channel | ||
| Package Type | SOT23; SOT-23-6 Thin, TSOT-23-6 | SOT23; SOT-23-6 Thin, TSOT-23-6 | SOT3; SOT23; 6-TSOP | SOT23; SOT-23-6 Thin, TSOT-23-6 | |
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON | |||
| V(BR)DSS | 12 volts | 12 volts | |||
| IDSS | 5900 milliamps |