Vishay Intertechnology, Inc. Single FETs, MOSFETs SI3473DV-T1-E3

Description
P-Channel 12V 5.9A (Ta) 1.1W (Ta) Surface Mount 6-TSOP
Request a Quote Datasheet
Description
P-Channel 12V 5.9A (Ta) 1.1W (Ta) Surface Mount 6-TSOP
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SI3473DV-T1-E3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI3473DV-T1-E3TR-ND
Single FETs, MOSFETs SI3473DV-T1-E3TR-ND
P-Channel 12V 5.9A (Ta) 1.1W (Ta) Surface Mount 6-TSOP

P-Channel 12V 5.9A (Ta) 1.1W (Ta) Surface Mount 6-TSOP

Buy Now Datasheet
Single FETs, MOSFETs - SI3473DV-T1-E3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI3473DV-T1-E3
Single FETs, MOSFETs SI3473DV-T1-E3
MOSFET P-CH 12V 5.9A 6TSOP

MOSFET P-CH 12V 5.9A 6TSOP

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3473DV-T1-E3 - 028437-SI3473DV-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3473DV-T1-E3
028437-SI3473DV-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3473DV-T1-E3 028437-SI3473DV-T1-E3
Manufacturer: Vishay Win Source Part Number: 028437-SI3473DV-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.1W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-TSOP Dimension: SOT-23-6 Thin, TSOT-23-6 Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 5.9A (Ta) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 33nC @ 4.5V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 23 mOhm @ 7.9A, 4.5V Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 028437-SI3473DV-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.1W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-TSOP
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 5.9A (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 33nC @ 4.5V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 23 mOhm @ 7.9A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI3473DV-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI3473DV-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI3473DV-T1-E3
MOSFET P-CH 12V 5.9A 6TSOP

MOSFET P-CH 12V 5.9A 6TSOP

Supplier's Site
MOSFET P-CH 12V 5.9A 6-TSOP - 880-SI3473DV-T1-E3 - Utmel Electronic Limited
Hong Kong, China
MOSFET P-CH 12V 5.9A 6-TSOP
880-SI3473DV-T1-E3
MOSFET P-CH 12V 5.9A 6-TSOP 880-SI3473DV-T1-E3
MOSFET P-CH 12V 5.9A 6-TSOP

MOSFET P-CH 12V 5.9A 6-TSOP

Supplier's Site

Technical Specifications

  DigiKey ODG (Origin Data Global) Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number SI3473DV-T1-E3TR-ND SI3473DV-T1-E3 028437-SI3473DV-T1-E3 SI3473DV-T1-E3 880-SI3473DV-T1-E3
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3473DV-T1-E3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET P-CH 12V 5.9A 6-TSOP
Polarity P-Channel P-Channel; P-Channel P-Channel; P-Channel
Package Type SOT23; SOT-23-6 Thin, TSOT-23-6 SOT23; SOT-23-6 Thin, TSOT-23-6 SOT3; SOT23; 6-TSOP SOT23; SOT-23-6 Thin, TSOT-23-6
Transistor Technology / Material MOSFET (Metal Oxide) SILICON
V(BR)DSS 12 volts 12 volts
IDSS 5900 milliamps
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