Manufacturer: Vishay
Win Source Part Number: 028437-SI3473DV-T1-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.1W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-TSOP
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 5.9A (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 33nC @ 4.5V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 23 mOhm @ 7.9A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Balance
MOSFET P-CH 12V 5.9A 6TSOP Product overview: SI3473DV-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 5.9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 5.9A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI3473DV-T1-E3 can be used for catalog matching and distributor lookup.
P-Channel 12V 5.9A (Ta) 1.1W (Ta) Surface Mount 6-TSOP
MOSFET P-CH 12V 5.9A 6-TSOP
MOSFET P-CH 12V 5.9A 6TSOP
MOSFET P-CH 12V 5.9A 6TSOP
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 028437-SI3473DV-T1-E3 | 278-SI3473DV-T1-E3 | SI3473DV-T1-E3TR-ND | 880-SI3473DV-T1-E3 | SI3473DV-T1-E3 | SI3473DV-T1-E3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3473DV-T1-E3 | 12V 5.9A MOSFET Transistor | Single FETs, MOSFETs | MOSFET P-CH 12V 5.9A 6-TSOP | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel; P-Channel | |||
| V(BR)DSS | 12 volts | 12 volts | ||||
| PD | 1100 milliwatts | 1100 milliwatts | 2000 milliwatts | 1100 milliwatts | ||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||
| Package Type | SOT3; SOT23; 6-TSOP | Tape & Reel (TR) | SOT23; SOT-23-6 Thin, TSOT-23-6 | SOT23; SOT-23-6 Thin, TSOT-23-6 | SOT23; SOT-23-6 Thin, TSOT-23-6 |
