Manufacturer: Vishay
Win Source Part Number: 097067-SI3447BDV-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.1W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-TSOP
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 4.5A (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 14nC @ 4.5V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 40 mOhm @ 6A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Industrial, Power Management
MOSFET P-CH 12V 4.5A 6TSOP
MOSFET P-CH 12V 4.5A 6TSOP Product overview: SI3447BDV-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 4.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 4.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI3447BDV-T1-E3 can be used for catalog matching and distributor lookup.
P-Channel 12V 4.5A (Ta) 1.1W (Ta) Surface Mount 6-TSOP
MOSFET P-CH 12V 4.5A 6TSOP
MOSFET P-CH 12V 4.5A 6-TSOP
| Win Source Electronics | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 097067-SI3447BDV-T1-E3 | SI3447BDV-T1-E3 | 278-SI3447BDV-T1-E3 | SI3447BDV-T1-E3TR-ND | SI3447BDV-T1-E3 | 880-SI3447BDV-T1-E3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3447BDV-T1-E3 | Single FETs, MOSFETs | 12V 4.5A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET P-CH 12V 4.5A 6-TSOP |
| Polarity | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | |||
| V(BR)DSS | 12 volts | 12 volts | -12 volts | |||
| PD | 1100 milliwatts | 1100 milliwatts | 1100 milliwatts | 1100 milliwatts | ||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||
| Package Type | SOT3; SOT23; 6-TSOP | SOT23; SOT-23-6 Thin, TSOT-23-6 | Tape & Reel (TR) | SOT23; SOT-23-6 Thin, TSOT-23-6 | SOT23; SOT-23-6 Thin, TSOT-23-6 |
