The Qorvo TGF2819-FL is a greater-than 200 W Peak (40 W Avg.) (P3dB) discrete GaN on SiC HEMT which operates from DC to 4.0 GHz. The device is constructed with Qorvo's proven TQGaN25HV process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.
Lead-free and ROHS compliant
Evaluation boards are available upon request.
DC-4.0GHZ,200W,50V,G
| Qorvo | DigiKey | |
|---|---|---|
| Product Category | RF Transistors | Transistors |
| Product Number | TGF2819-FL | 2312-TGF2819-FL-ND |
| Product Name | DC - 4.0 GHz, 200 Watt Peak, 40 Watt Avg.Power, 50 Volt, GaN RF Power Transistor | RF FETs, MOSFETs |
| Transistor Technology / Material | DC - 4.0 GHz, 200 Watt Peak, 40 Watt Avg.Power, 50 Volt, GaN RF Power Transistor |
