Vishay Intertechnology, Inc. Single FETs, MOSFETs SI2369BDS-T1-BE3

P-Channel 30 V (D-S) MOSFET in SOT-23 package, with a maximum drain-source voltage of -30 V, continuous drain current of -7.5 A at 25 °C, and drain-source on-state resistance of 0.0270 Ω at V_GS = -10 V and 0.0390 Ω at V_GS = -4.5 V. The device features a total gate charge of 6.2 nC, operates over a junction and storage temperature range of -55 °C to +150 °C, and meets RoHS standards. It is designed for load switch, circuit protection, and motor drive control applications.