Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2325DS-T1-E3 SI2325DS-T1-E3

Description
Manufacturer: Vishay Win Source Part Number: 1095740-SI2325DS-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 750mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 (TO-236) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 150V Continuous Drain Current at 25°C: 530mA (Ta) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 12nC @ 10V Max Input Capacitance: 510pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.2 Ohm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Sufficient Application Field: Used in Industrial, Power Management
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Description
Manufacturer: Vishay Win Source Part Number: 1095740-SI2325DS-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 750mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 (TO-236) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 150V Continuous Drain Current at 25°C: 530mA (Ta) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 12nC @ 10V Max Input Capacitance: 510pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.2 Ohm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Sufficient Application Field: Used in Industrial, Power Management
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2325DS-T1-E3 - 1095740-SI2325DS-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2325DS-T1-E3
1095740-SI2325DS-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2325DS-T1-E3 1095740-SI2325DS-T1-E3
Manufacturer: Vishay Win Source Part Number: 1095740-SI2325DS-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 750mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 (TO-236) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 150V Continuous Drain Current at 25°C: 530mA (Ta) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 12nC @ 10V Max Input Capacitance: 510pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.2 Ohm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Sufficient Application Field: Used in Industrial, Power Management

Manufacturer: Vishay
Win Source Part Number: 1095740-SI2325DS-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 750mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 530mA (Ta)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 12nC @ 10V
Max Input Capacitance: 510pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.2 Ohm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Industrial, Power Management

Buy Now Datasheet
Single FETs, MOSFETs - SI2325DS-T1-E3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI2325DS-T1-E3
Single FETs, MOSFETs SI2325DS-T1-E3
MOSFET P-CH 150V 530MA SOT23-3

MOSFET P-CH 150V 530MA SOT23-3

Supplier's Site Datasheet
Single FETs, MOSFETs - SI2325DS-T1-E3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI2325DS-T1-E3TR-ND
Single FETs, MOSFETs SI2325DS-T1-E3TR-ND
P-Channel 150V 530mA (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)

P-Channel 150V 530mA (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
Single FETs, MOSFETs - SI2325DS-T1-E3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI2325DS-T1-E3DKR-ND
Single FETs, MOSFETs SI2325DS-T1-E3DKR-ND
P-Channel 150V 530mA (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)

P-Channel 150V 530mA (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
Single FETs, MOSFETs - SI2325DS-T1-E3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI2325DS-T1-E3CT-ND
Single FETs, MOSFETs SI2325DS-T1-E3CT-ND
P-Channel 150V 530mA (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)

P-Channel 150V 530mA (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
MOSFETs - 7103263 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
7103263
MOSFETs 7103263
MOSFET P-Channel 150V 0.53A SOT23

MOSFET P-Channel 150V 0.53A SOT23

Supplier's Site
MOSFETs - 9190275 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
9190275
MOSFETs 9190275
MOSFET P-Channel 150V 0.53A SOT23

MOSFET P-Channel 150V 0.53A SOT23

Supplier's Site
MOSFETs - 7103263P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
7103263P
MOSFETs 7103263P
MOSFET P-Channel 150V 0.53A SOT23

MOSFET P-Channel 150V 0.53A SOT23

Supplier's Site
Singapore
P-Channel 150V 530mA 1.2 Ohm MOSFET Transistor
278-SI2325DS-T1-E3
P-Channel 150V 530mA 1.2 Ohm MOSFET Transistor 278-SI2325DS-T1-E3
P-Channel JFET, 150V, 530mA, 1.2 Ohm, SOT-23 Product overview: SI2325DS-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 150V, 530mA, 1.2 Ohm, SOT-23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 150V, 530mA, 1.2 Ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI2325DS-T1-E3 can be used for catalog matching and distributor lookup.

P-Channel JFET, 150V, 530mA, 1.2 Ohm, SOT-23 Product overview: SI2325DS-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 150V, 530mA, 1.2 Ohm, SOT-23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 150V, 530mA, 1.2 Ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI2325DS-T1-E3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET -150V Vds 20V Vgs SOT-23

MOSFET -150V Vds 20V Vgs SOT-23

Buy Now Datasheet
P Channel Mosfet, -150V, 690Ma, To-236; Channel Type Vishay - 43K8583 - Newark, An Avnet Company
Chicago, IL, United States
P Channel Mosfet, -150V, 690Ma, To-236; Channel Type Vishay
43K8583
P Channel Mosfet, -150V, 690Ma, To-236; Channel Type Vishay 43K8583
P CHANNEL MOSFET, -150V, 690mA, TO-236; Channel Type:P Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:690mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:6V; Gate Source Threshold Voltage Max:4.5V RoHS Compliant: Yes

P CHANNEL MOSFET, -150V, 690mA, TO-236; Channel Type:P Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:690mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:6V; Gate Source Threshold Voltage Max:4.5V RoHS Compliant: Yes

Supplier's Site
P Channel Mosfet, -150V, 690Ma, To-236, Full Reel; Channel Type Vishay - 73W9409 - Newark, An Avnet Company
Chicago, IL, United States
P Channel Mosfet, -150V, 690Ma, To-236, Full Reel; Channel Type Vishay
73W9409
P Channel Mosfet, -150V, 690Ma, To-236, Full Reel; Channel Type Vishay 73W9409
P CHANNEL MOSFET, -150V, 690mA, TO-236, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:690mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:6V; Power Dissipation:750mW RoHS Compliant: Yes

P CHANNEL MOSFET, -150V, 690mA, TO-236, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:690mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:6V; Power Dissipation:750mW RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI2325DS-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI2325DS-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI2325DS-T1-E3
MOSFET P-CH 150V 530MA SOT23-3

MOSFET P-CH 150V 530MA SOT23-3

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey RS Components, Ltd. RS Components, Ltd. ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Newark, An Avnet Company Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1095740-SI2325DS-T1-E3 SI2325DS-T1-E3 SI2325DS-T1-E3TR-ND 7103263 7103263P 278-SI2325DS-T1-E3 SI2325DS-T1-E3 43K8583 73W9409 SI2325DS-T1-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2325DS-T1-E3 Single FETs, MOSFETs Single FETs, MOSFETs MOSFETs MOSFETs P-Channel 150V 530mA 1.2 Ohm MOSFET Transistor MOSFET P Channel Mosfet, -150V, 690Ma, To-236; Channel Type Vishay P Channel Mosfet, -150V, 690Ma, To-236, Full Reel; Channel Type Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel; P-Channel P-Channel P-Channel P-Channel P-Channel P-Channel P-Channel
V(BR)DSS 150 volts 150 volts
PD 750 milliwatts 750 milliwatts 750 milliwatts 750 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 C (-67 F)
Package Type SOT3; SOT23; SOT-23-3 (TO-236) SOT23; TO-236-3, SC-59, SOT-23-3 SOT23; TO-236-3, SC-59, SOT-23-3 SOT23; Sot-23 (to-236) SOT23; SOT-23 TO-3 TO-3 SOT23; TO-236-3, SC-59, SOT-23-3
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