Small Signal Field-Effect Transistor, 0.00125A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, TO-236, 3 PIN Product overview: SI2309DS-T1 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 0.00125A, 60V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 0.00125A, 60V, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-SI2309DS-T1 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 1248834-SI2309DS-T1
Manufacturer Homepage: www.vishay.com
RoHS State: Request Verification
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Limited
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 285-SI2309DS-T1 | 1248834-SI2309DS-T1 |
| Product Name | P-Channel 0.00125A 60V MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2309DS-T1 |
| Polarity | P-Channel |
