Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2301ADS-T1-E3 SI2301ADS-T1-E3

Description
Manufacturer: Vishay Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 965297-SI2301ADS-T1- E3 Mounting: SMD (SMT) Drain to Source Voltage (Vdss): -20 V Power Dissipation: 900 mW Weight: 1.437803 g Number of Channels: 1 Number of Pins: 3 Rise Time: 30 ns Fall Time: 30 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: SOT-23-3 Popularity: Low Fake Threat In the Open Market: 75 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C RoHS: Compliant Min Operating Temperature: -55 °C Element Configuration: Single Max Power Dissipation: 900 mW Turn-On Delay Time: 6 ns Continuous Drain Current (ID): 2 A Turn-Off Delay Time: 25 ns Drain to Source Resistance: 130 mΩ Gate to Source Voltage (Vgs): 8 V
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Description
Manufacturer: Vishay Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 965297-SI2301ADS-T1- E3 Mounting: SMD (SMT) Drain to Source Voltage (Vdss): -20 V Power Dissipation: 900 mW Weight: 1.437803 g Number of Channels: 1 Number of Pins: 3 Rise Time: 30 ns Fall Time: 30 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: SOT-23-3 Popularity: Low Fake Threat In the Open Market: 75 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C RoHS: Compliant Min Operating Temperature: -55 °C Element Configuration: Single Max Power Dissipation: 900 mW Turn-On Delay Time: 6 ns Continuous Drain Current (ID): 2 A Turn-Off Delay Time: 25 ns Drain to Source Resistance: 130 mΩ Gate to Source Voltage (Vgs): 8 V
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2301ADS-T1-E3 - 965297-SI2301ADS-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2301ADS-T1-E3
965297-SI2301ADS-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2301ADS-T1-E3 965297-SI2301ADS-T1-E3
Manufacturer: Vishay Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 965297-SI2301ADS-T1- E3 Mounting: SMD (SMT) Drain to Source Voltage (Vdss): -20 V Power Dissipation: 900 mW Weight: 1.437803 g Number of Channels: 1 Number of Pins: 3 Rise Time: 30 ns Fall Time: 30 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: SOT-23-3 Popularity: Low Fake Threat In the Open Market: 75 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C RoHS: Compliant Min Operating Temperature: -55 °C Element Configuration: Single Max Power Dissipation: 900 mW Turn-On Delay Time: 6 ns Continuous Drain Current (ID): 2 A Turn-Off Delay Time: 25 ns Drain to Source Resistance: 130 mΩ Gate to Source Voltage (Vgs): 8 V

Manufacturer: Vishay
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 965297-SI2301ADS-T1-E3
Mounting: SMD (SMT)
Drain to Source Voltage (Vdss): -20 V
Power Dissipation: 900 mW
Weight: 1.437803 g
Number of Channels: 1
Number of Pins: 3
Rise Time: 30 ns
Fall Time: 30 ns
Categories: Transistors - FETs, MOSFETs - RF
Case / Package: SOT-23-3
Popularity: Low
Fake Threat In the Open Market: 75 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 150 °C
RoHS: Compliant
Min Operating Temperature: -55 °C
Element Configuration: Single
Max Power Dissipation: 900 mW
Turn-On Delay Time: 6 ns
Continuous Drain Current (ID): 2 A
Turn-Off Delay Time: 25 ns
Drain to Source Resistance: 130 mΩ
Gate to Source Voltage (Vgs): 8 V

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 965297-SI2301ADS-T1-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI2301ADS-T1-E3
rDS(on) 0.1300 ohms
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