Vishay Intertechnology, Inc. FET, MOSFET Arrays SI1912EDH-T1-E3

Mosfet Array 2 N-Channel (Dual) 20V 1.13A 570mW Surface Mount SC-70-6

MOSFET 2N-CH 20V 1.13A SC70-6 Product overview: SI1912EDH-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 1.13A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 1.13A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-SI1912EDH-T1-E3 can be used for catalog matching and distributor lookup.

Manufacturer: Vishay
Win Source Part Number: 099876-SI1912EDH-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: Si1912EDH
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-70-6 (SOT-363)
Maximum Power Dissipation: 570mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 1.13A
Gate-Source Threshold Voltage: 450mV @ 100μA (Min)
Max Gate Charge: 1nC @ 4.5V
Maximum Rds On at Id,Vgs: 280 mOhm @ 1.13A, 4.5V
Alternative Parts (Cross-Reference): Si1922EDH-T1-GE3; FDG6335N-Q; FDG6335-NL; FDG6317NZ_NL;
Introduction Date: February 25, 2001
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: Obsolete / End of life
Halogen Free: Not Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Balance