Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1407DL-T1-E3 SI1407DL-T1-E3

Description
Manufacturer: Vishay Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 990570-SI1407DL-T1-E 3 Mounting: SMD (SMT) Drain to Source Voltage (Vdss): -12 V Number of Elements: 1 Power Dissipation: 568 mW Number of Pins: 6 Rise Time: 33 ns Fall Time: 33 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: SOT-363-6 Popularity: Low Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Mount: Surface Mount RoHS: Compliant Min Operating Temperature: -55 °C Element Configuration: Single Max Power Dissipation: 568 mW Continuous Drain Current (ID): 1.6 A Drain to Source Breakdown Voltage: 12 V Turn-Off Delay Time: 32 ns Drain to Source Resistance: 130 mΩ Gate to Source Voltage (Vgs): 8 V
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Description
Manufacturer: Vishay Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 990570-SI1407DL-T1-E 3 Mounting: SMD (SMT) Drain to Source Voltage (Vdss): -12 V Number of Elements: 1 Power Dissipation: 568 mW Number of Pins: 6 Rise Time: 33 ns Fall Time: 33 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: SOT-363-6 Popularity: Low Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Mount: Surface Mount RoHS: Compliant Min Operating Temperature: -55 °C Element Configuration: Single Max Power Dissipation: 568 mW Continuous Drain Current (ID): 1.6 A Drain to Source Breakdown Voltage: 12 V Turn-Off Delay Time: 32 ns Drain to Source Resistance: 130 mΩ Gate to Source Voltage (Vgs): 8 V
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1407DL-T1-E3 - 990570-SI1407DL-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1407DL-T1-E3
990570-SI1407DL-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1407DL-T1-E3 990570-SI1407DL-T1-E3
Manufacturer: Vishay Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 990570-SI1407DL-T1-E 3 Mounting: SMD (SMT) Drain to Source Voltage (Vdss): -12 V Number of Elements: 1 Power Dissipation: 568 mW Number of Pins: 6 Rise Time: 33 ns Fall Time: 33 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: SOT-363-6 Popularity: Low Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Mount: Surface Mount RoHS: Compliant Min Operating Temperature: -55 °C Element Configuration: Single Max Power Dissipation: 568 mW Continuous Drain Current (ID): 1.6 A Drain to Source Breakdown Voltage: 12 V Turn-Off Delay Time: 32 ns Drain to Source Resistance: 130 mΩ Gate to Source Voltage (Vgs): 8 V

Manufacturer: Vishay
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 990570-SI1407DL-T1-E3
Mounting: SMD (SMT)
Drain to Source Voltage (Vdss): -12 V
Number of Elements: 1
Power Dissipation: 568 mW
Number of Pins: 6
Rise Time: 33 ns
Fall Time: 33 ns
Categories: Transistors - FETs, MOSFETs - RF
Case / Package: SOT-363-6
Popularity: Low
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 150 °C
Mount: Surface Mount
RoHS: Compliant
Min Operating Temperature: -55 °C
Element Configuration: Single
Max Power Dissipation: 568 mW
Continuous Drain Current (ID): 1.6 A
Drain to Source Breakdown Voltage: 12 V
Turn-Off Delay Time: 32 ns
Drain to Source Resistance: 130 mΩ
Gate to Source Voltage (Vgs): 8 V

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Sheung Wan, Hong Kong
MOSFET 12V 1.8A

MOSFET 12V 1.8A

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Technical Specifications

  Win Source Electronics VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 990570-SI1407DL-T1-E3 SI1407DL-T1-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1407DL-T1-E3 MOSFET
V(BR)DSS 12 volts
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