Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1317DL-T1-GE3 SI1317DL-T1-GE3

Description
Manufacturer: Vishay Win Source Part Number: 1095680-SI1317DL-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 400mW (Ta), 500mW (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Active Temperature Range - Operating: -50°C to 150°C (TJ) Case / Package: SOT-323 Dimension: SC-70, SOT-323 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 1.4A (Tc) Gate-Source Threshold Voltage: 800mV @ 250μA Max Gate Charge: 6.5nC @ 4.5V Max Input Capacitance: 272pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 150 mOhm @ 1.4A, 4.5V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Vishay Win Source Part Number: 1095680-SI1317DL-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 400mW (Ta), 500mW (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Active Temperature Range - Operating: -50°C to 150°C (TJ) Case / Package: SOT-323 Dimension: SC-70, SOT-323 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 1.4A (Tc) Gate-Source Threshold Voltage: 800mV @ 250μA Max Gate Charge: 6.5nC @ 4.5V Max Input Capacitance: 272pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 150 mOhm @ 1.4A, 4.5V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Sufficient
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1317DL-T1-GE3 - 1095680-SI1317DL-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1317DL-T1-GE3
1095680-SI1317DL-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1317DL-T1-GE3 1095680-SI1317DL-T1-GE3
Manufacturer: Vishay Win Source Part Number: 1095680-SI1317DL-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 400mW (Ta), 500mW (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Active Temperature Range - Operating: -50°C to 150°C (TJ) Case / Package: SOT-323 Dimension: SC-70, SOT-323 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 1.4A (Tc) Gate-Source Threshold Voltage: 800mV @ 250μA Max Gate Charge: 6.5nC @ 4.5V Max Input Capacitance: 272pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 150 mOhm @ 1.4A, 4.5V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Sufficient

Manufacturer: Vishay
Win Source Part Number: 1095680-SI1317DL-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 400mW (Ta), 500mW (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -50°C to 150°C (TJ)
Case / Package: SOT-323
Dimension: SC-70, SOT-323
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 1.4A (Tc)
Gate-Source Threshold Voltage: 800mV @ 250μA
Max Gate Charge: 6.5nC @ 4.5V
Max Input Capacitance: 272pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 150 mOhm @ 1.4A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - SI1317DL-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI1317DL-T1-GE3DKR-ND
Single FETs, MOSFETs SI1317DL-T1-GE3DKR-ND
P-Channel 20V 1.4A (Tc) 500mW (Tc) Surface Mount SC-70-3

P-Channel 20V 1.4A (Tc) 500mW (Tc) Surface Mount SC-70-3

Buy Now Datasheet
Single FETs, MOSFETs - SI1317DL-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI1317DL-T1-GE3CT-ND
Single FETs, MOSFETs SI1317DL-T1-GE3CT-ND
P-Channel 20V 1.4A (Tc) 500mW (Tc) Surface Mount SC-70-3

P-Channel 20V 1.4A (Tc) 500mW (Tc) Surface Mount SC-70-3

Buy Now Datasheet
Single FETs, MOSFETs - SI1317DL-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI1317DL-T1-GE3TR-ND
Single FETs, MOSFETs SI1317DL-T1-GE3TR-ND
P-Channel 20V 1.4A (Tc) 500mW (Tc) Surface Mount SC-70-3

P-Channel 20V 1.4A (Tc) 500mW (Tc) Surface Mount SC-70-3

Buy Now Datasheet
Singapore
20V 1.4A MOSFET Transistor
278-SI1317DL-T1-GE3
20V 1.4A MOSFET Transistor 278-SI1317DL-T1-GE3
P-CH JFET 20V 1.4A 270mR SOT-323 Tape & Reel Product overview: SI1317DL-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 1.4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 1.4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI1317DL-T1-GE3 can be used for catalog matching and distributor lookup.

P-CH JFET 20V 1.4A 270mR SOT-323 Tape & Reel Product overview: SI1317DL-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 1.4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 1.4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI1317DL-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET -20V Vds 8V Vgs SC70-3

MOSFET -20V Vds 8V Vgs SC70-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI1317DL-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI1317DL-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI1317DL-T1-GE3
MOSFET P-CH 20V 1.4A SOT323

MOSFET P-CH 20V 1.4A SOT323

Supplier's Site
Mosfet, P Channel, W/d, 20V, 1.4A, Sot323; Transistor Polarity Vishay - 64T4051 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P Channel, W/d, 20V, 1.4A, Sot323; Transistor Polarity Vishay
64T4051
Mosfet, P Channel, W/d, 20V, 1.4A, Sot323; Transistor Polarity Vishay 64T4051
MOSFET, P CHANNEL, W/D, 20V, 1.4A, SOT323; Transistor Polarity:P Channel; Continuous Drain Current Id:-1.4A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.125ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:450mV RoHS Compliant: Yes

MOSFET, P CHANNEL, W/D, 20V, 1.4A, SOT323; Transistor Polarity:P Channel; Continuous Drain Current Id:-1.4A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.125ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:450mV RoHS Compliant: Yes

Supplier's Site Datasheet
Single FETs, MOSFETs - SI1317DL-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI1317DL-T1-GE3
Single FETs, MOSFETs SI1317DL-T1-GE3
MOSFET P-CH 20V 1.4A SOT323

MOSFET P-CH 20V 1.4A SOT323

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company ODG (Origin Data Global)
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1095680-SI1317DL-T1-GE3 SI1317DL-T1-GE3DKR-ND 278-SI1317DL-T1-GE3 SI1317DL-T1-GE3 SI1317DL-T1-GE3 64T4051 SI1317DL-T1-GE3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1317DL-T1-GE3 Single FETs, MOSFETs 20V 1.4A MOSFET Transistor MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, P Channel, W/d, 20V, 1.4A, Sot323; Transistor Polarity Vishay Single FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel P-Channel P-Channel P-Channel; P-Channel
V(BR)DSS 20 volts 20 volts
PD 400 to 500 milliwatts 500 milliwatts 500 milliwatts
TJ -50 to 150 C (-58 to 302 F) -50 C (-58 F) -50 to 150 C (-58 to 302 F)
Package Type SOT3; SOT323; SOT-323 SOT323; SC-70, SOT-323 SOT323; SC-70, SOT-323 TO-3 SOT323; SC-70, SOT-323
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