Qorvo DC - 6 GHz, 30 Watt, 28 V GaN RF Power Transistor T2G6003028-FL

Description
Qorvo's T2G6003028-FL is a 30 W (P3dB) wideband input pre-matched discrete GaN on SiC HEMT which operates from DC to 6 GHz and a 28V supply rail. The device is in an industry standard air cavity package and is ideally suited to military and civilian radar, land mobile and military radio communications, avionics, and test instrumentation. The device can support pulsed and linear operations. Lead-free and ROHS compliant Evaluation boards are available upon request.
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DC - 6 GHz, 30 Watt, 28 V GaN RF Power Transistor - T2G6003028-FL - Qorvo
Greensboro, NC, United States
DC - 6 GHz, 30 Watt, 28 V GaN RF Power Transistor
T2G6003028-FL
DC - 6 GHz, 30 Watt, 28 V GaN RF Power Transistor T2G6003028-FL
Qorvo's T2G6003028-FL is a 30 W (P3dB) wideband input pre-matched discrete GaN on SiC HEMT which operates from DC to 6 GHz and a 28V supply rail. The device is in an industry standard air cavity package and is ideally suited to military and civilian radar, land mobile and military radio communications, avionics, and test instrumentation. The device can support pulsed and linear operations. Lead-free and ROHS compliant Evaluation boards are available upon request.

Qorvo's T2G6003028-FL is a 30 W (P3dB) wideband input pre-matched discrete GaN on SiC HEMT which operates from DC to 6 GHz and a 28V supply rail. The device is in an industry standard air cavity package and is ideally suited to military and civilian radar, land mobile and military radio communications, avionics, and test instrumentation. The device can support pulsed and linear operations.

Lead-free and ROHS compliant

Evaluation boards are available upon request.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
RF JFET Transistors
T2G6003028-FL
RF JFET Transistors T2G6003028-FL
RF JFET Transistors DC-6.0GHz 30 Watt 28V GaN Flanged

RF JFET Transistors DC-6.0GHz 30 Watt 28V GaN Flanged

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RF FETs, MOSFETs - 2312-T2G6003028-FL-ND - DigiKey
Thief River Falls, MN, United States
RF FETs, MOSFETs
2312-T2G6003028-FL-ND
RF FETs, MOSFETs 2312-T2G6003028-FL-ND
DC-6 GHZ,30W, 28V GAN RF POWER X

DC-6 GHZ,30W, 28V GAN RF POWER X

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Technical Specifications

  Qorvo VAST STOCK CO., LIMITED DigiKey
Product Category RF Transistors Transistors Transistors
Product Number T2G6003028-FL T2G6003028-FL 2312-T2G6003028-FL-ND
Product Name DC - 6 GHz, 30 Watt, 28 V GaN RF Power Transistor RF JFET Transistors RF FETs, MOSFETs
Transistor Technology / Material GaN
Transistor Grade / Operating Range Military
Package Type NI-200 2L-FLG
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