Qorvo's T2G6003028-FL is a 30 W (P3dB) wideband input pre-matched discrete GaN on SiC HEMT which operates from DC to 6 GHz and a 28V supply rail. The device is in an industry standard air cavity package and is ideally suited to military and civilian radar, land mobile and military radio communications, avionics, and test instrumentation. The device can support pulsed and linear operations.
Lead-free and ROHS compliant
Evaluation boards are available upon request.
RF JFET Transistors DC-6.0GHz 30 Watt 28V GaN Flanged
DC-6 GHZ,30W, 28V GAN RF POWER X
Qorvo | VAST STOCK CO., LIMITED | DigiKey | |
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Product Category | RF Transistors | Transistors | Transistors |
Product Number | T2G6003028-FL | T2G6003028-FL | 2312-T2G6003028-FL-ND |
Product Name | DC - 6 GHz, 30 Watt, 28 V GaN RF Power Transistor | RF JFET Transistors | RF FETs, MOSFETs |
Transistor Technology / Material | GaN | ||
Transistor Grade / Operating Range | Military | ||
Package Type | NI-200 | 2L-FLG |