Vishay Intertechnology, Inc. FETs - Single - IRLI640G IRLI640G

Description
Manufacturer: Vishay Siliconix Win Source Part Number: 1188556-IRLI640G Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-220-3 Full Pack, Isolated Tab Power Dissipation (Maximum): 40W Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 200V Id - Continuous Drain Current: 9.9A Rds On (Maximum) at Id, Vgs: 180mOhm at 5.9A, 5V Gate Source Voltage(th) (Maximum) at Id: 2V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 66nC at 10V Gate Source Voltage (Maximum): ±10V Input Capacitance (Ciss) (Maximum) at Vds: 1800pF at 25V
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Description
Manufacturer: Vishay Siliconix Win Source Part Number: 1188556-IRLI640G Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-220-3 Full Pack, Isolated Tab Power Dissipation (Maximum): 40W Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 200V Id - Continuous Drain Current: 9.9A Rds On (Maximum) at Id, Vgs: 180mOhm at 5.9A, 5V Gate Source Voltage(th) (Maximum) at Id: 2V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 66nC at 10V Gate Source Voltage (Maximum): ±10V Input Capacitance (Ciss) (Maximum) at Vds: 1800pF at 25V
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Suppliers

Company
Product
Description
Supplier Links
FETs - Single - IRLI640G - 1188556-IRLI640G - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IRLI640G
1188556-IRLI640G
FETs - Single - IRLI640G 1188556-IRLI640G
Manufacturer: Vishay Siliconix Win Source Part Number: 1188556-IRLI640G Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-220-3 Full Pack, Isolated Tab Power Dissipation (Maximum): 40W Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 200V Id - Continuous Drain Current: 9.9A Rds On (Maximum) at Id, Vgs: 180mOhm at 5.9A, 5V Gate Source Voltage(th) (Maximum) at Id: 2V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 66nC at 10V Gate Source Voltage (Maximum): ±10V Input Capacitance (Ciss) (Maximum) at Vds: 1800pF at 25V

Manufacturer: Vishay Siliconix
Win Source Part Number: 1188556-IRLI640G
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-220-3 Full Pack, Isolated Tab
Power Dissipation (Maximum): 40W
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 200V
Id - Continuous Drain Current: 9.9A
Rds On (Maximum) at Id, Vgs: 180mOhm at 5.9A, 5V
Gate Source Voltage(th) (Maximum) at Id: 2V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 66nC at 10V
Gate Source Voltage (Maximum): ±10V
Input Capacitance (Ciss) (Maximum) at Vds: 1800pF at 25V

Buy Now
Single FETs, MOSFETs - IRLI640G-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRLI640G-ND
Single FETs, MOSFETs IRLI640G-ND
N-Channel 200V 9.9A (Tc) 40W (Tc) Through Hole TO-220-3

N-Channel 200V 9.9A (Tc) 40W (Tc) Through Hole TO-220-3

Buy Now Datasheet
Singapore
200V 9.9A TO220 MOSFET Transistor
278-IRLI640G
200V 9.9A TO220 MOSFET Transistor 278-IRLI640G
MOSFET N-CH 200V 9.9A TO220-3 Product overview: IRLI640G from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 9.9A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 9.9A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRLI640G can be used for catalog matching and distributor lookup.

MOSFET N-CH 200V 9.9A TO220-3 Product overview: IRLI640G from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 9.9A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 9.9A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRLI640G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRLI640G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRLI640G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRLI640G
MOSFET N-CH 200V 9.9A TO220-3

MOSFET N-CH 200V 9.9A TO220-3

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Power MOSFET Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1188556-IRLI640G IRLI640G-ND 278-IRLI640G IRLI640G
Product Name FETs - Single - IRLI640G Single FETs, MOSFETs 200V 9.9A TO220 MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 200 volts
QG 66 nC
PD 40000 milliwatts 40000 milliwatts
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