Vishay Intertechnology, Inc. FETs - Single - IRFZ40 IRFZ40

Description
Manufacturer: Vishay Siliconix Win Source Part Number: 1188182-IRFZ40 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 175°C Manufacturer Homepage: www.st.com Manufacturer Package: TO-220-3 Power Dissipation (Maximum): 150W Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Limited Application Field: Used in Industrial, Power Management, Commercial Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 60V Id - Continuous Drain Current: 50A Rds On (Maximum) at Id, Vgs: 28mOhm at 31A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 67nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 1900pF at 25V
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Description
Manufacturer: Vishay Siliconix Win Source Part Number: 1188182-IRFZ40 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 175°C Manufacturer Homepage: www.st.com Manufacturer Package: TO-220-3 Power Dissipation (Maximum): 150W Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Limited Application Field: Used in Industrial, Power Management, Commercial Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 60V Id - Continuous Drain Current: 50A Rds On (Maximum) at Id, Vgs: 28mOhm at 31A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 67nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 1900pF at 25V
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Suppliers

Company
Product
Description
Supplier Links
FETs - Single - IRFZ40 - 1188182-IRFZ40 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IRFZ40
1188182-IRFZ40
FETs - Single - IRFZ40 1188182-IRFZ40
Manufacturer: Vishay Siliconix Win Source Part Number: 1188182-IRFZ40 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 175°C Manufacturer Homepage: www.st.com Manufacturer Package: TO-220-3 Power Dissipation (Maximum): 150W Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Limited Application Field: Used in Industrial, Power Management, Commercial Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 60V Id - Continuous Drain Current: 50A Rds On (Maximum) at Id, Vgs: 28mOhm at 31A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 67nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 1900pF at 25V

Manufacturer: Vishay Siliconix
Win Source Part Number: 1188182-IRFZ40
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-220-3
Power Dissipation (Maximum): 150W
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Limited
Application Field: Used in Industrial, Power Management, Commercial
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 60V
Id - Continuous Drain Current: 50A
Rds On (Maximum) at Id, Vgs: 28mOhm at 31A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 67nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 1900pF at 25V

Buy Now
Single FETs, MOSFETs - IRFZ40-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFZ40-ND
Single FETs, MOSFETs IRFZ40-ND
N-Channel 60V 50A (Tc) 150W (Tc) Through Hole TO-220AB

N-Channel 60V 50A (Tc) 150W (Tc) Through Hole TO-220AB

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFZ40 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFZ40
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFZ40
MOSFET N-CH 60V 50A TO220AB

MOSFET N-CH 60V 50A TO220AB

Supplier's Site
MOSFET N-CH 60V 50A TO220AB - 880-IRFZ40 - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 60V 50A TO220AB
880-IRFZ40
MOSFET N-CH 60V 50A TO220AB 880-IRFZ40
MOSFET N-CH 60V 50A TO220AB

MOSFET N-CH 60V 50A TO220AB

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited
Product Category Power MOSFET Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1188182-IRFZ40 IRFZ40-ND IRFZ40 880-IRFZ40
Product Name FETs - Single - IRFZ40 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET N-CH 60V 50A TO220AB
Polarity N-Channel; N-Channel N-Channel
Operating Mode Enhancement
V(BR)DSS 60 volts 60 volts
QG 67 nC
PD 150000 milliwatts 126000 milliwatts
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