Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFZ24PBF IRFZ24PBF

Description
Manufacturer: Vishay Win Source Part Number: 1047232-IRFZ24PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 60W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 17A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 25nC @ 10V Max Input Capacitance: 640pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 100 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Sufficient
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFZ24PBF - 1047232-IRFZ24PBF - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IRFZ24PBF-ND - DigiKey
    DigiKey
  • MOSFETs - 8120672 - RS Components, Ltd.
    RS Components, Ltd.
  • MOSFETs - 8120672P - RS Components, Ltd.
    RS Components, Ltd.
  • MOSFETs - 1451838 - RS Components, Ltd.
    RS Components, Ltd.
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFZ24PBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • N Channel Mosfet, 55V, 17A To-220Ab; Channel Type Vishay - 19K8196 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 1047232-IRFZ24PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 60W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 17A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 25nC @ 10V Max Input Capacitance: 640pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 100 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFZ24PBF - 1047232-IRFZ24PBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFZ24PBF
1047232-IRFZ24PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFZ24PBF 1047232-IRFZ24PBF
Manufacturer: Vishay Win Source Part Number: 1047232-IRFZ24PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 60W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 17A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 25nC @ 10V Max Input Capacitance: 640pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 100 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Sufficient

Manufacturer: Vishay
Win Source Part Number: 1047232-IRFZ24PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 60W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 17A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 25nC @ 10V
Max Input Capacitance: 640pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 100 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - IRFZ24PBF-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFZ24PBF-ND
Single FETs, MOSFETs IRFZ24PBF-ND
N-Channel 60V 17A (Tc) 60W (Tc) Through Hole TO-220AB

N-Channel 60V 17A (Tc) 60W (Tc) Through Hole TO-220AB

Buy Now Datasheet
MOSFETs - 8120672 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
8120672
MOSFETs 8120672
Trans MOSFET N-CH 60V 17A 3-Pin(3+Tab)

Trans MOSFET N-CH 60V 17A 3-Pin(3+Tab)

Supplier's Site
MOSFETs - 8120672P - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
8120672P
MOSFETs 8120672P
Trans MOSFET N-CH 60V 17A 3-Pin(3+Tab)

Trans MOSFET N-CH 60V 17A 3-Pin(3+Tab)

Supplier's Site
MOSFETs - 1451838 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1451838
MOSFETs 1451838
Trans MOSFET N-CH 60V 17A 3-Pin(3+Tab)

Trans MOSFET N-CH 60V 17A 3-Pin(3+Tab)

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFZ24PBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFZ24PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFZ24PBF
MOSFET N-CH 60V 17A TO220AB

MOSFET N-CH 60V 17A TO220AB

Supplier's Site
N Channel Mosfet, 55V, 17A To-220Ab; Channel Type Vishay - 19K8196 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 55V, 17A To-220Ab; Channel Type Vishay
19K8196
N Channel Mosfet, 55V, 17A To-220Ab; Channel Type Vishay 19K8196
N CHANNEL MOSFET, 55V, 17A TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:17A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

N CHANNEL MOSFET, 55V, 17A TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:17A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IRFZ24PBF
MOSFET IRFZ24PBF
MOSFET N-CH 60V HEXFET MOSFET

MOSFET N-CH 60V HEXFET MOSFET

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey RS Components, Ltd. RS Components, Ltd. Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1047232-IRFZ24PBF IRFZ24PBF-ND 8120672 8120672P IRFZ24PBF 19K8196 IRFZ24PBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFZ24PBF Single FETs, MOSFETs MOSFETs MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs N Channel Mosfet, 55V, 17A To-220Ab; Channel Type Vishay MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel
V(BR)DSS 60 volts
PD 60000 milliwatts
TJ -55 to 175 C (-67 to 347 F)
Package Type TO-220; SOT3; TO-220AB TO-220; TO-220-3 TO-220; To-220ab TO-220; TO-220AB TO-220; TO-220-3 TO-3; TO-220
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