The Vishay N-Channel MOSFET (part number 05W6856) features a maximum drain-source voltage (Vds) of 200V and a continuous drain current (Id) rating of 4.8A. It has a low on-resistance (Rds(on)) of 0.80Oc at a gate-source voltage (Vgs) of 10V, making it suitable for applications requiring efficient power management. The device is designed for surface mounting in a TO-252 package, allowing for easy integration into various circuit designs. It supports fast switching capabilities and is rated for repetitive avalanche conditions, enhancing its reliability in demanding environments. The MOSFET operates within a temperature range of -55¬8C to +150¬8C, providing versatility for different applications. Additionally, it has a maximum power dissipation of 42W at a case temperature of 25¬8C, which can be critical for thermal management in high-power applications.
N-Channel MOSFET, 200V, 4.8A, 800mR, DPAK, Power Product overview: IRFR220TRPBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 200V, 4.8A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 4.8A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFR220TRPBF can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 017662-IRFR220TRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 4.8A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 14nC @ 10V
Max Input Capacitance: 260pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 800 mOhm @ 2.9A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Sufficient
N-Channel 200V 4.8A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak
N-Channel 200V 4.8A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak
N-Channel 200V 4.8A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak
Trans MOSFET N-CH 200V 4.8A 3-Pin(2+Tab)
Trans MOSFET N-CH 200V 4.8A 3-Pin(2+Tab)
Trans MOSFET N-CH 200V 4.8A 3-Pin(2+Tab)
MOSFET N-CH 200V 4.8A DPAK
MOSFET, N CH, 200V, 4.8A, TO-252-3; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:4.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes
N CHANNEL MOSFET, 200V, 4.8A, D-PAK, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:4.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:2.5W RoHS Compliant: Yes
MOSFET, N-CH, 200V, 4.8A, TO-252 ROHS COMPLIANT: YES
MOSFET N-CH 200V 4.8A DPAK
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | RS Components, Ltd. | RS Components, Ltd. | ODG (Origin Data Global) | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-IRFR220TRPBF | 017662-IRFR220TRPBF | IRFR220PBFCT-ND | 8120629 | 8120629P | IRFR220TRPBF | 05W6856 | 63J6931 | 56AJ9896 | IRFR220TRPBF | IRFR220TRPBF |
| Product Name | N-Channel 200V 4.8A DPAK MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR220TRPBF | Single FETs, MOSFETs | MOSFETs | MOSFETs | Single FETs, MOSFETs | Mosfet, N Ch, 200V, 4.8A, To-252-3; Channel Type Vishay | N Channel Mosfet, 200V, 4.8A, D-Pak, Full Reel; Channel Type Vishay | Mosfet, N-Ch, 200V, 4.8A, To-252 Rohs Compliant Vishay | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||||
| PD | 2500 milliwatts | 2500 to 42000 milliwatts | 2500 milliwatts | 2500 milliwatts | |||||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||||||
| V(BR)DSS | 200 volts | 200 volts | |||||||||
| Package Type | SOT3; TO-252 (DPAK); D-Pak | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252 (DPAK); Dpak (to-252) | TO-252 (DPAK); TO-252 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-3 | TO-3 | TO-3 | Surface Mount |
