N-Channel 800V 2.1A (Tc) 35W (Tc) Through Hole TO-220-3
Manufacturer: Vishay
Win Source Part Number: 140244-IRFIBE30GPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 35W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3 Full Pack, Isolated Tab
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 2.1A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 78nC @ 10V
Max Input Capacitance: 1300pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3 Ohm @ 1.3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance
N-Channel MOSFET, 800V, 2.1A, 3R, TO-220AB Product overview: IRFIBE30GPBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 800V, 2.1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, 2.1A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFIBE30GPBF can be used for catalog matching and distributor lookup.
MOSFET Transistor, N Channel, 2.1 A, 800 V, 3 ohm, 10 V, 4 V RoHS Compliant: Yes
POWER FIELD-EFFECT TRANSISTOR, 2.1A I(D), 800V, 3OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY
MOSFET N-CH 800V 2.1A TO220-3
MOSFET N-CH 800V 2.1A TO220-3
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Radwell International | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRFIBE30GPBF-ND | 140244-IRFIBE30GPBF | 278-IRFIBE30GPBF | IRFIBE30GPBF | 97K1998 | 16347213 | IRFIBE30GPBF | IRFIBE30GPBF |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFIBE30GPBF | N-Channel 800V 2.1A MOSFET Transistor | MOSFET | Mosfet Transistor, N Channel, 2.1 A, 800 V, 3 Ohm, 10 V, 4 V Rohs Compliant Vishay | Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| Package Type | TO-220; TO-220-3 Full Pack, Isolated Tab | TO-220; SOT3; TO-220-3 | TO-3 | TO-220; TO-220-3 Full Pack, Isolated Tab | TO-220; TO-220-3 Full Pack, Isolated Tab | |||
| V(BR)DSS | 800 volts | 800 volts | ||||||
| PD | 35000 milliwatts | 35000 milliwatts | 35000 milliwatts |
