Vishay Precision Group Single FETs, MOSFETs IRFIBE30GPBF

Description
N-Channel 800V 2.1A (Tc) 35W (Tc) Through Hole TO-220-3
Request a Quote Datasheet
Description
N-Channel 800V 2.1A (Tc) 35W (Tc) Through Hole TO-220-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRFIBE30GPBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFIBE30GPBF-ND
Single FETs, MOSFETs IRFIBE30GPBF-ND
N-Channel 800V 2.1A (Tc) 35W (Tc) Through Hole TO-220-3

N-Channel 800V 2.1A (Tc) 35W (Tc) Through Hole TO-220-3

Buy Now Datasheet
Single FETs, MOSFETs - IRFIBE30GPBF - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRFIBE30GPBF
Single FETs, MOSFETs IRFIBE30GPBF
MOSFET N-CH 800V 2.1A TO220-3

MOSFET N-CH 800V 2.1A TO220-3

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFIBE30GPBF - 140244-IRFIBE30GPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFIBE30GPBF
140244-IRFIBE30GPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFIBE30GPBF 140244-IRFIBE30GPBF
Manufacturer: Vishay Win Source Part Number: 140244-IRFIBE30GPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 35W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Full Pack, Isolated Tab Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 2.1A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 78nC @ 10V Max Input Capacitance: 1300pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3 Ohm @ 1.3A, 10V Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 140244-IRFIBE30GPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 35W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3 Full Pack, Isolated Tab
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 2.1A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 78nC @ 10V
Max Input Capacitance: 1300pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3 Ohm @ 1.3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Transistor - 16347213 - Radwell International
Willingboro, NJ, United States
Transistor
16347213
Transistor 16347213
POWER FIELD-EFFECT TRANSISTOR, 2.1A I(D), 800V, 3OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY

POWER FIELD-EFFECT TRANSISTOR, 2.1A I(D), 800V, 3OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFIBE30GPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFIBE30GPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFIBE30GPBF
MOSFET N-CH 800V 2.1A TO220-3

MOSFET N-CH 800V 2.1A TO220-3

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-CH 800V HEXFET MOSFET

MOSFET N-CH 800V HEXFET MOSFET

Buy Now Datasheet
Mosfet Transistor, N Channel, 2.1 A, 800 V, 3 Ohm, 10 V, 4 V Rohs Compliant Vishay - 97K1998 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, N Channel, 2.1 A, 800 V, 3 Ohm, 10 V, 4 V Rohs Compliant Vishay
97K1998
Mosfet Transistor, N Channel, 2.1 A, 800 V, 3 Ohm, 10 V, 4 V Rohs Compliant Vishay 97K1998
MOSFET Transistor, N Channel, 2.1 A, 800 V, 3 ohm, 10 V, 4 V RoHS Compliant: Yes

MOSFET Transistor, N Channel, 2.1 A, 800 V, 3 ohm, 10 V, 4 V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  DigiKey ODG (Origin Data Global) Win Source Electronics Radwell International Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IRFIBE30GPBF-ND IRFIBE30GPBF 140244-IRFIBE30GPBF 16347213 IRFIBE30GPBF IRFIBE30GPBF 97K1998
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFIBE30GPBF Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet Transistor, N Channel, 2.1 A, 800 V, 3 Ohm, 10 V, 4 V Rohs Compliant Vishay
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel N-Channel
Package Type TO-220; TO-220-3 Full Pack, Isolated Tab TO-220; TO-220-3 Full Pack, Isolated Tab TO-220; SOT3; TO-220-3 TO-220; TO-220-3 Full Pack, Isolated Tab TO-3
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 800 volts 800 volts
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