Vishay Precision Group Single FETs, MOSFETs IRFIBE30GPBF

Description
MOSFET N-CH 800V 2.1A TO220-3
  • Single FETs, MOSFETs - IRFIBE30GPBF - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - IRFIBE30GPBF-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFIBE30GPBF - 140244-IRFIBE30GPBF - Win Source Electronics
    Win Source Electronics
  • Mosfet Transistor, N Channel, 2.1 A, 800 V, 3 Ohm, 10 V, 4 V Rohs Compliant Vishay - 97K1998 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Transistor - 16347213 - Radwell International
    Radwell International
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFIBE30GPBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
MOSFET N-CH 800V 2.1A TO220-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRFIBE30GPBF - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRFIBE30GPBF
Single FETs, MOSFETs IRFIBE30GPBF
MOSFET N-CH 800V 2.1A TO220-3

MOSFET N-CH 800V 2.1A TO220-3

Supplier's Site Datasheet
Single FETs, MOSFETs - IRFIBE30GPBF-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFIBE30GPBF-ND
Single FETs, MOSFETs IRFIBE30GPBF-ND
N-Channel 800V 2.1A (Tc) 35W (Tc) Through Hole TO-220-3

N-Channel 800V 2.1A (Tc) 35W (Tc) Through Hole TO-220-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFIBE30GPBF - 140244-IRFIBE30GPBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFIBE30GPBF
140244-IRFIBE30GPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFIBE30GPBF 140244-IRFIBE30GPBF
Manufacturer: Vishay Win Source Part Number: 140244-IRFIBE30GPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 35W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Full Pack, Isolated Tab Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 2.1A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 78nC @ 10V Max Input Capacitance: 1300pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3 Ohm @ 1.3A, 10V Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 140244-IRFIBE30GPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 35W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3 Full Pack, Isolated Tab
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 2.1A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 78nC @ 10V
Max Input Capacitance: 1300pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3 Ohm @ 1.3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Mosfet Transistor, N Channel, 2.1 A, 800 V, 3 Ohm, 10 V, 4 V Rohs Compliant Vishay - 97K1998 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, N Channel, 2.1 A, 800 V, 3 Ohm, 10 V, 4 V Rohs Compliant Vishay
97K1998
Mosfet Transistor, N Channel, 2.1 A, 800 V, 3 Ohm, 10 V, 4 V Rohs Compliant Vishay 97K1998
MOSFET Transistor, N Channel, 2.1 A, 800 V, 3 ohm, 10 V, 4 V RoHS Compliant: Yes

MOSFET Transistor, N Channel, 2.1 A, 800 V, 3 ohm, 10 V, 4 V RoHS Compliant: Yes

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IRFIBE30GPBF
MOSFET IRFIBE30GPBF
MOSFET N-CH 800V HEXFET MOSFET

MOSFET N-CH 800V HEXFET MOSFET

Buy Now Datasheet
Transistor - 16347213 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
16347213
Transistor 16347213
POWER FIELD-EFFECT TRANSISTOR, 2.1A I(D), 800V, 3OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY

POWER FIELD-EFFECT TRANSISTOR, 2.1A I(D), 800V, 3OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFIBE30GPBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFIBE30GPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFIBE30GPBF
MOSFET N-CH 800V 2.1A TO220-3

MOSFET N-CH 800V 2.1A TO220-3

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics Newark, An Avnet Company VAST STOCK CO., LIMITED Radwell International Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors RF Transistors
Product Number IRFIBE30GPBF IRFIBE30GPBF-ND 140244-IRFIBE30GPBF 97K1998 IRFIBE30GPBF 16347213 IRFIBE30GPBF
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFIBE30GPBF Mosfet Transistor, N Channel, 2.1 A, 800 V, 3 Ohm, 10 V, 4 V Rohs Compliant Vishay MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 800 volts 800 volts
IDSS 2100 milliamps
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