Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFIBE30GPBF IRFIBE30GPBF

Description
Manufacturer: Vishay Win Source Part Number: 140244-IRFIBE30GPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 35W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Full Pack, Isolated Tab Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 2.1A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 78nC @ 10V Max Input Capacitance: 1300pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3 Ohm @ 1.3A, 10V Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFIBE30GPBF - 140244-IRFIBE30GPBF - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IRFIBE30GPBF-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - IRFIBE30GPBF - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Transistor - 16347213 - Radwell International
    Radwell International
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFIBE30GPBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet Transistor, N Channel, 2.1 A, 800 V, 3 Ohm, 10 V, 4 V Rohs Compliant Vishay - 97K1998 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 140244-IRFIBE30GPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 35W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Full Pack, Isolated Tab Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 2.1A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 78nC @ 10V Max Input Capacitance: 1300pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3 Ohm @ 1.3A, 10V Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFIBE30GPBF - 140244-IRFIBE30GPBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFIBE30GPBF
140244-IRFIBE30GPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFIBE30GPBF 140244-IRFIBE30GPBF
Manufacturer: Vishay Win Source Part Number: 140244-IRFIBE30GPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 35W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Full Pack, Isolated Tab Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 2.1A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 78nC @ 10V Max Input Capacitance: 1300pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3 Ohm @ 1.3A, 10V Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 140244-IRFIBE30GPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 35W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3 Full Pack, Isolated Tab
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 2.1A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 78nC @ 10V
Max Input Capacitance: 1300pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3 Ohm @ 1.3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
N-Channel 800V 2.1A MOSFET Transistor
278-IRFIBE30GPBF
N-Channel 800V 2.1A MOSFET Transistor 278-IRFIBE30GPBF
N-Channel MOSFET, 800V, 2.1A, 3R, TO-220AB Product overview: IRFIBE30GPBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 800V, 2.1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, 2.1A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFIBE30GPBF can be used for catalog matching and distributor lookup.

N-Channel MOSFET, 800V, 2.1A, 3R, TO-220AB Product overview: IRFIBE30GPBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 800V, 2.1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, 2.1A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFIBE30GPBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - IRFIBE30GPBF-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFIBE30GPBF-ND
Single FETs, MOSFETs IRFIBE30GPBF-ND
N-Channel 800V 2.1A (Tc) 35W (Tc) Through Hole TO-220-3

N-Channel 800V 2.1A (Tc) 35W (Tc) Through Hole TO-220-3

Buy Now Datasheet
Single FETs, MOSFETs - IRFIBE30GPBF - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRFIBE30GPBF
Single FETs, MOSFETs IRFIBE30GPBF
MOSFET N-CH 800V 2.1A TO220-3

MOSFET N-CH 800V 2.1A TO220-3

Supplier's Site Datasheet
Transistor - 16347213 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
16347213
Transistor 16347213
POWER FIELD-EFFECT TRANSISTOR, 2.1A I(D), 800V, 3OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY

POWER FIELD-EFFECT TRANSISTOR, 2.1A I(D), 800V, 3OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IRFIBE30GPBF
MOSFET IRFIBE30GPBF
MOSFET N-CH 800V HEXFET MOSFET

MOSFET N-CH 800V HEXFET MOSFET

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFIBE30GPBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFIBE30GPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFIBE30GPBF
MOSFET N-CH 800V 2.1A TO220-3

MOSFET N-CH 800V 2.1A TO220-3

Supplier's Site
Mosfet Transistor, N Channel, 2.1 A, 800 V, 3 Ohm, 10 V, 4 V Rohs Compliant Vishay - 97K1998 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, N Channel, 2.1 A, 800 V, 3 Ohm, 10 V, 4 V Rohs Compliant Vishay
97K1998
Mosfet Transistor, N Channel, 2.1 A, 800 V, 3 Ohm, 10 V, 4 V Rohs Compliant Vishay 97K1998
MOSFET Transistor, N Channel, 2.1 A, 800 V, 3 ohm, 10 V, 4 V RoHS Compliant: Yes

MOSFET Transistor, N Channel, 2.1 A, 800 V, 3 ohm, 10 V, 4 V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey ODG (Origin Data Global) Radwell International VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 140244-IRFIBE30GPBF 278-IRFIBE30GPBF IRFIBE30GPBF-ND IRFIBE30GPBF 16347213 IRFIBE30GPBF IRFIBE30GPBF 97K1998
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFIBE30GPBF N-Channel 800V 2.1A MOSFET Transistor Single FETs, MOSFETs Single FETs, MOSFETs Transistor MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet Transistor, N Channel, 2.1 A, 800 V, 3 Ohm, 10 V, 4 V Rohs Compliant Vishay
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 800 volts 800 volts
PD 35000 milliwatts 35000 milliwatts 35000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F) -55 to 150 C (-67 to 302 F)
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