MOSFET N-CH 800V 2.1A TO220-3
Manufacturer: Vishay
Win Source Part Number: 140244-IRFIBE30GPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 35W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3 Full Pack, Isolated Tab
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 2.1A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 78nC @ 10V
Max Input Capacitance: 1300pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3 Ohm @ 1.3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance
N-Channel 800V 2.1A (Tc) 35W (Tc) Through Hole TO-220-3
MOSFET Transistor, N Channel, 2.1 A, 800 V, 3 ohm, 10 V, 4 V RoHS Compliant: Yes
MOSFET N-CH 800V 2.1A TO220-3
POWER FIELD-EFFECT TRANSISTOR, 2.1A I(D), 800V, 3OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | Radwell International | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRFIBE30GPBF | 140244-IRFIBE30GPBF | IRFIBE30GPBF-ND | 97K1998 | IRFIBE30GPBF | 16347213 | IRFIBE30GPBF |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFIBE30GPBF | Single FETs, MOSFETs | Mosfet Transistor, N Channel, 2.1 A, 800 V, 3 Ohm, 10 V, 4 V Rohs Compliant Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Transistor | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 800 volts | 800 volts | |||||
| IDSS | 2100 milliamps |
