Vishay Precision Group Single FETs, MOSFETs IRFI520GPBF

Description
N-Channel 100V 7.2A (Tc) 37W (Tc) Through Hole TO-220-3
Request a Quote Datasheet
Description
N-Channel 100V 7.2A (Tc) 37W (Tc) Through Hole TO-220-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRFI520GPBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFI520GPBF-ND
Single FETs, MOSFETs IRFI520GPBF-ND
N-Channel 100V 7.2A (Tc) 37W (Tc) Through Hole TO-220-3

N-Channel 100V 7.2A (Tc) 37W (Tc) Through Hole TO-220-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFI520GPBF - 135000-IRFI520GPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFI520GPBF
135000-IRFI520GPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFI520GPBF 135000-IRFI520GPBF
Manufacturer: Vishay Win Source Part Number: 135000-IRFI520GPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 37W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Full Pack, Isolated Tab Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 7.2A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 16nC @ 10V Max Input Capacitance: 360pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 270 mOhm @ 4.3A, 10V Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 135000-IRFI520GPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 37W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3 Full Pack, Isolated Tab
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 7.2A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 16nC @ 10V
Max Input Capacitance: 360pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 270 mOhm @ 4.3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET N-CH 100V HEXFET MOSFET

MOSFET N-CH 100V HEXFET MOSFET

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFI520GPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFI520GPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFI520GPBF
MOSFET N-CH 100V 7.2A TO220-3

MOSFET N-CH 100V 7.2A TO220-3

Supplier's Site
N Channel Mosfet, 100V, 7.2A To-220; Channel Type Vishay - 63J6761 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 100V, 7.2A To-220; Channel Type Vishay
63J6761
N Channel Mosfet, 100V, 7.2A To-220; Channel Type Vishay 63J6761
N CHANNEL MOSFET, 100V, 7.2A TO-220; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:7.2A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

N CHANNEL MOSFET, 100V, 7.2A TO-220; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:7.2A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

Supplier's Site
MOSFET N-CH 100V 7.2A TO220FP - 880-IRFI520GPBF - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 100V 7.2A TO220FP
880-IRFI520GPBF
MOSFET N-CH 100V 7.2A TO220FP 880-IRFI520GPBF
MOSFET N-CH 100V 7.2A TO220FP

MOSFET N-CH 100V 7.2A TO220FP

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company Utmel Electronic Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IRFI520GPBF-ND 135000-IRFI520GPBF IRFI520GPBF IRFI520GPBF 63J6761 880-IRFI520GPBF
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFI520GPBF MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs N Channel Mosfet, 100V, 7.2A To-220; Channel Type Vishay MOSFET N-CH 100V 7.2A TO220FP
Polarity N-Channel N-Channel; N-Channel N-Channel
Package Type TO-220; TO-220-3 Full Pack, Isolated Tab TO-220; SOT3; TO-220-3 TO-220; TO-220-3 Full Pack, Isolated Tab TO-3; TO-220
V(BR)DSS 100 volts
PD 37000 milliwatts 37000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
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