Vishay Intertechnology, Inc. Single FETs, MOSFETs IRFD9120

Description
P-Channel 100V 1A (Ta) 1.3W (Ta) Through Hole 4-HVMDIP
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Description
P-Channel 100V 1A (Ta) 1.3W (Ta) Through Hole 4-HVMDIP
Request a Quote Datasheet

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Single FETs, MOSFETs - IRFD9120-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFD9120-ND
Single FETs, MOSFETs IRFD9120-ND
P-Channel 100V 1A (Ta) 1.3W (Ta) Through Hole 4-HVMDIP

P-Channel 100V 1A (Ta) 1.3W (Ta) Through Hole 4-HVMDIP

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD9120 - 093884-IRFD9120 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD9120
093884-IRFD9120
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD9120 093884-IRFD9120
Manufacturer: Vishay Win Source Part Number: 093884-IRFD9120 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.3W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: 4-DIP, Hexdip, HVMDIP Dimension: 4-DIP (0.300", 7.62mm) Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 1A (Ta) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 18nC @ 10V Max Input Capacitance: 390pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 600 mOhm @ 600mA, 10V Alternative Parts (Cross-Reference): IRFD9120PBF; SiHFD9120-E3; Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 093884-IRFD9120
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.3W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: 4-DIP, Hexdip, HVMDIP
Dimension: 4-DIP (0.300", 7.62mm)
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 1A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 18nC @ 10V
Max Input Capacitance: 390pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 600 mOhm @ 600mA, 10V
Alternative Parts (Cross-Reference): IRFD9120PBF; SiHFD9120-E3;
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance

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Technical Specifications

  DigiKey Win Source Electronics
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IRFD9120-ND 093884-IRFD9120
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD9120
Polarity P-Channel P-Channel; P-Channel
Package Type "4-DIP (0.300"", 7.62mm)" SOT3; 4-DIP, Hexdip, HVMDIP
V(BR)DSS 100 volts
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