Manufacturer: Vishay
Win Source Part Number: 118784-IRFD220PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 4-DIP, Hexdip, HVMDIP
Dimension: 4-DIP (0.300", 7.62mm)
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 800mA (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 14nC @ 10V
Max Input Capacitance: 260pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 800 mOhm @ 480mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial, Power Management
N-Channel 200V 800mA (Ta) 1W (Ta) Through Hole 4-HVMDIP
MOSFET N-CH 200V 800MA 4DIP
Trans MOSFET N-CH 200V 0.8A 4-Pin HVMDIP
MOSFET Transistor, N Channel, 1.3 A, 200 V, 800 mohm, 10 V, 4 V RoHS Compliant: Yes
MOSFET N-CH 200V 800MA 4DIP
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.8Ohm;ID 0.8A;HD-1;PD 1W;VGS +/-20V;gFS 0.
MOSFET N-CH 200V HEXFET MOSFET HEXDI
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | Utmel Electronic Limited | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | Allied Electronics, Inc. | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 118784-IRFD220PBF | IRFD220PBF-ND | IRFD220PBF | 880-IRFD220PBF | 97K1987 | IRFD220PBF | 70078895 | IRFD220PBF |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD220PBF | Single FETs, MOSFETs | Single FETs, MOSFETs | Trans MOSFET N-CH 200V 0.8A 4-Pin HVMDIP | Mosfet Transistor, N Channel, 1.3 A, 200 V, 800 Mohm, 10 V, 4 V Rohs Compliant Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.8Ohm;ID 0.8A;HD-1;PD 1W;VGS +/-20V;gFS 0. | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| V(BR)DSS | 200 volts | 200 volts | 200 volts | |||||
| PD | 1000 milliwatts | 1000 milliwatts | 1000 milliwatts | 1000 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | SOT3; 4-DIP, Hexdip, HVMDIP | "4-DIP (0.300"", 7.62mm)" | 4-DIP (0.300", 7.62mm) | TO-3 | 4-DIP (0.300, 7.62mm) | HD-1 |
