Manufacturer: Vishay
Win Source Part Number: 118784-IRFD220PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 4-DIP, Hexdip, HVMDIP
Dimension: 4-DIP (0.300", 7.62mm)
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 800mA (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 14nC @ 10V
Max Input Capacitance: 260pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 800 mOhm @ 480mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial, Power Management
N-Channel 200V 800mA (Ta) 1W (Ta) Through Hole 4-HVMDIP
N-Channel MOSFET, 200V, 800mA, 1W, Through Hole Product overview: IRFD220PBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, Through-Hole, 200V, 800mA, 1W. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Through-Hole, 200V, 800mA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFD220PBF can be used for catalog matching and distributor lookup.
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MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.8Ohm;ID 0.8A;HD-1;PD 1W;VGS +/-20V;gFS 0.
MOSFET Transistor, N Channel, 1.3 A, 200 V, 800 mohm, 10 V, 4 V RoHS Compliant: Yes
Trans MOSFET N-CH 200V 0.8A 4-Pin HVMDIP
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Allied Electronics, Inc. | Newark, An Avnet Company | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 118784-IRFD220PBF | IRFD220PBF-ND | 278-IRFD220PBF | IRFD220PBF | IRFD220PBF | IRFD220PBF | 70078895 | 97K1987 | 880-IRFD220PBF |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD220PBF | Single FETs, MOSFETs | N-Channel Through-Hole 200V 800mA MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.8Ohm;ID 0.8A;HD-1;PD 1W;VGS +/-20V;gFS 0. | Mosfet Transistor, N Channel, 1.3 A, 200 V, 800 Mohm, 10 V, 4 V Rohs Compliant Vishay | Trans MOSFET N-CH 200V 0.8A 4-Pin HVMDIP |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| V(BR)DSS | 200 volts | 200 volts | 200 volts | ||||||
| PD | 1000 milliwatts | 1000 milliwatts | 1000 milliwatts | 1000 milliwatts | 1000 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | SOT3; 4-DIP, Hexdip, HVMDIP | "4-DIP (0.300"", 7.62mm)" | 4-DIP (0.300", 7.62mm) | 4-DIP (0.300, 7.62mm) | HD-1 | TO-3 |
