N-Channel 200V 800mA (Ta) 1W (Ta) Through Hole 4-HVMDIP
MOSFET N-CH 200V 800MA 4DIP
Manufacturer: Vishay
Win Source Part Number: 118784-IRFD220PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 4-DIP, Hexdip, HVMDIP
Dimension: 4-DIP (0.300", 7.62mm)
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 800mA (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 14nC @ 10V
Max Input Capacitance: 260pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 800 mOhm @ 480mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial, Power Management
MOSFET N-CH 200V HEXFET MOSFET HEXDI
MOSFET Transistor, N Channel, 1.3 A, 200 V, 800 mohm, 10 V, 4 V RoHS Compliant: Yes
MOSFET N-CH 200V 800MA 4DIP
Trans MOSFET N-CH 200V 0.8A 4-Pin HVMDIP
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.8Ohm;ID 0.8A;HD-1;PD 1W;VGS +/-20V;gFS 0.
| DigiKey | ODG (Origin Data Global) | Win Source Electronics | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | Allied Electronics, Inc. | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRFD220PBF-ND | IRFD220PBF | 118784-IRFD220PBF | IRFD220PBF | 97K1987 | IRFD220PBF | 880-IRFD220PBF | 70078895 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD220PBF | MOSFET | Mosfet Transistor, N Channel, 1.3 A, 200 V, 800 Mohm, 10 V, 4 V Rohs Compliant Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Trans MOSFET N-CH 200V 0.8A 4-Pin HVMDIP | MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.8Ohm;ID 0.8A;HD-1;PD 1W;VGS +/-20V;gFS 0. |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| Package Type | "4-DIP (0.300"", 7.62mm)" | 4-DIP (0.300", 7.62mm) | SOT3; 4-DIP, Hexdip, HVMDIP | TO-3 | 4-DIP (0.300, 7.62mm) | HD-1 | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 200 volts | 200 volts | 200 volts | |||||
| IDSS | 800 milliamps |