Vishay Precision Group Single FETs, MOSFETs IRFD220PBF

Description
MOSFET N-CH 200V 800MA 4DIP
  • Single FETs, MOSFETs - IRFD220PBF - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD220PBF - 118784-IRFD220PBF - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IRFD220PBF-ND - DigiKey
    DigiKey
  • Mosfet Transistor, N Channel, 1.3 A, 200 V, 800 Mohm, 10 V, 4 V Rohs Compliant Vishay - 97K1987 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFD220PBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.8Ohm;ID 0.8A;HD-1;PD 1W;VGS +/-20V;gFS 0. - 70078895 - Allied Electronics, Inc.
    Allied Electronics, Inc.
  • Trans MOSFET N-CH 200V 0.8A 4-Pin HVMDIP - 880-IRFD220PBF - Utmel Electronic Limited
    Utmel Electronic Limited
Request a Quote Datasheet
Description
MOSFET N-CH 200V 800MA 4DIP
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRFD220PBF - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRFD220PBF
Single FETs, MOSFETs IRFD220PBF
MOSFET N-CH 200V 800MA 4DIP

MOSFET N-CH 200V 800MA 4DIP

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD220PBF - 118784-IRFD220PBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD220PBF
118784-IRFD220PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD220PBF 118784-IRFD220PBF
Manufacturer: Vishay Win Source Part Number: 118784-IRFD220PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 4-DIP, Hexdip, HVMDIP Dimension: 4-DIP (0.300", 7.62mm) Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 800mA (Ta) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 14nC @ 10V Max Input Capacitance: 260pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 800 mOhm @ 480mA, 10V Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Balance Application Field: Used in Industrial, Power Management

Manufacturer: Vishay
Win Source Part Number: 118784-IRFD220PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 4-DIP, Hexdip, HVMDIP
Dimension: 4-DIP (0.300", 7.62mm)
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 800mA (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 14nC @ 10V
Max Input Capacitance: 260pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 800 mOhm @ 480mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial, Power Management

Buy Now Datasheet
Single FETs, MOSFETs - IRFD220PBF-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFD220PBF-ND
Single FETs, MOSFETs IRFD220PBF-ND
N-Channel 200V 800mA (Ta) 1W (Ta) Through Hole 4-HVMDIP

N-Channel 200V 800mA (Ta) 1W (Ta) Through Hole 4-HVMDIP

Buy Now Datasheet
Mosfet Transistor, N Channel, 1.3 A, 200 V, 800 Mohm, 10 V, 4 V Rohs Compliant Vishay - 97K1987 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, N Channel, 1.3 A, 200 V, 800 Mohm, 10 V, 4 V Rohs Compliant Vishay
97K1987
Mosfet Transistor, N Channel, 1.3 A, 200 V, 800 Mohm, 10 V, 4 V Rohs Compliant Vishay 97K1987
MOSFET Transistor, N Channel, 1.3 A, 200 V, 800 mohm, 10 V, 4 V RoHS Compliant: Yes

MOSFET Transistor, N Channel, 1.3 A, 200 V, 800 mohm, 10 V, 4 V RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFD220PBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFD220PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFD220PBF
MOSFET N-CH 200V 800MA 4DIP

MOSFET N-CH 200V 800MA 4DIP

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IRFD220PBF
MOSFET IRFD220PBF
MOSFET N-CH 200V HEXFET MOSFET HEXDI

MOSFET N-CH 200V HEXFET MOSFET HEXDI

Buy Now Datasheet
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.8Ohm;ID 0.8A;HD-1;PD 1W;VGS +/-20V;gFS 0. - 70078895 - Allied Electronics, Inc.
Allied Electronics, Inc.
Fort Worth, TX, USA
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.8Ohm;ID 0.8A;HD-1;PD 1W;VGS +/-20V;gFS 0.
70078895
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.8Ohm;ID 0.8A;HD-1;PD 1W;VGS +/-20V;gFS 0. 70078895
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.8Ohm;ID 0.8A;HD-1;PD 1W;VGS +/-20V;gFS 0.

MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.8Ohm;ID 0.8A;HD-1;PD 1W;VGS +/-20V;gFS 0.

Supplier's Site
Trans MOSFET N-CH 200V 0.8A 4-Pin HVMDIP - 880-IRFD220PBF - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
Trans MOSFET N-CH 200V 0.8A 4-Pin HVMDIP
880-IRFD220PBF
Trans MOSFET N-CH 200V 0.8A 4-Pin HVMDIP 880-IRFD220PBF
Trans MOSFET N-CH 200V 0.8A 4-Pin HVMDIP

Trans MOSFET N-CH 200V 0.8A 4-Pin HVMDIP

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Allied Electronics, Inc. Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IRFD220PBF 118784-IRFD220PBF IRFD220PBF-ND 97K1987 IRFD220PBF IRFD220PBF 70078895 880-IRFD220PBF
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD220PBF Single FETs, MOSFETs Mosfet Transistor, N Channel, 1.3 A, 200 V, 800 Mohm, 10 V, 4 V Rohs Compliant Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.8Ohm;ID 0.8A;HD-1;PD 1W;VGS +/-20V;gFS 0. Trans MOSFET N-CH 200V 0.8A 4-Pin HVMDIP
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 200 volts 200 volts 200 volts
IDSS 800 milliamps
PD 1000 milliwatts 1000 milliwatts 1000 milliwatts 1000 milliwatts
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