Vishay Intertechnology, Inc. Single FETs, MOSFETs IRF740AS

Description
N-Channel 400V 10A (Tc) 3.1W (Ta), 125W (Tc) Surface Mount D²PAK (TO-263)
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Description
N-Channel 400V 10A (Tc) 3.1W (Ta), 125W (Tc) Surface Mount D²PAK (TO-263)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRF740AS-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF740AS-ND
Single FETs, MOSFETs IRF740AS-ND
N-Channel 400V 10A (Tc) 3.1W (Ta), 125W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 400V 10A (Tc) 3.1W (Ta), 125W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
FETs - Single - IRF740AS - 1187257-IRF740AS - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IRF740AS
1187257-IRF740AS
FETs - Single - IRF740AS 1187257-IRF740AS
Manufacturer: Vishay Siliconix Win Source Part Number: 1187257-IRF740AS Packaging: Tube Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Power Dissipation (Maximum): 3.1W, 125W Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 400V Id - Continuous Drain Current: 10A Rds On (Maximum) at Id, Vgs: 550mOhm at 6A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 36nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 1030pF at 25V

Manufacturer: Vishay Siliconix
Win Source Part Number: 1187257-IRF740AS
Packaging: Tube
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Maximum): 3.1W, 125W
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 400V
Id - Continuous Drain Current: 10A
Rds On (Maximum) at Id, Vgs: 550mOhm at 6A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 36nC at 10V
Gate Source Voltage (Maximum): ±30V
Input Capacitance (Ciss) (Maximum) at Vds: 1030pF at 25V

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Integrated Circuits (ICs) - Transistors - MOSFETs - IRF740AS - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Transistors - MOSFETs
IRF740AS
Integrated Circuits (ICs) - Transistors - MOSFETs IRF740AS
Integrated Circuits (ICs) - Transistors - MOSFETs

Integrated Circuits (ICs) - Transistors - MOSFETs

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IRF740AS-ND 1187257-IRF740AS IRF740AS
Product Name Single FETs, MOSFETs FETs - Single - IRF740AS Integrated Circuits (ICs) - Transistors - MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; SOT3
V(BR)DSS 400 volts
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