Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF720PBF IRF720PBF

Description
Manufacturer: Vishay Win Source Part Number: 017487-IRF720PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 50W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 400V Continuous Drain Current at 25°C: 3.3A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 20nC @ 10V Max Input Capacitance: 410pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.8 Ohm @ 2A, 10V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Sufficient
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF720PBF - 017487-IRF720PBF - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IRF720PBF - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - IRF720PBF-ND - DigiKey
    DigiKey
  • MOSFET, Power;N-Ch;VDSS 400V;RDS(ON) 1.8 Ohms;ID 3.3A;TO-220AB;PD 50W;VGS +/-20V - 70079031 - Allied Electronics, Inc.
    Allied Electronics, Inc.
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF720PBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Transistor - 16357337 - Radwell International
    Radwell International
  • Mosfet Transistor, N Channel, 3 A, 400 V, 1.8 Ohm, 10 V, 4 V Rohs Compliant Vishay - 38K2840 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 017487-IRF720PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 50W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 400V Continuous Drain Current at 25°C: 3.3A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 20nC @ 10V Max Input Capacitance: 410pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.8 Ohm @ 2A, 10V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF720PBF - 017487-IRF720PBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF720PBF
017487-IRF720PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF720PBF 017487-IRF720PBF
Manufacturer: Vishay Win Source Part Number: 017487-IRF720PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 50W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 400V Continuous Drain Current at 25°C: 3.3A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 20nC @ 10V Max Input Capacitance: 410pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.8 Ohm @ 2A, 10V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Sufficient

Manufacturer: Vishay
Win Source Part Number: 017487-IRF720PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 50W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 400V
Continuous Drain Current at 25°C: 3.3A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 20nC @ 10V
Max Input Capacitance: 410pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.8 Ohm @ 2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - IRF720PBF - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRF720PBF
Single FETs, MOSFETs IRF720PBF
MOSFET N-CH 400V 3.3A TO220AB

MOSFET N-CH 400V 3.3A TO220AB

Supplier's Site Datasheet
Single FETs, MOSFETs - IRF720PBF-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF720PBF-ND
Single FETs, MOSFETs IRF720PBF-ND
N-Channel 400V 3.3A (Tc) 50W (Tc) Through Hole TO-220AB

N-Channel 400V 3.3A (Tc) 50W (Tc) Through Hole TO-220AB

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
N-Channel 400V 3.3A MOSFET Transistor
278-IRF720PBF
N-Channel 400V 3.3A MOSFET Transistor 278-IRF720PBF
N-Channel MOSFET, 400V, 3.3A, 1.8R, TO-220AB Product overview: IRF720PBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 400V, 3.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 400V, 3.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF720PBF can be used for catalog matching and distributor lookup.

N-Channel MOSFET, 400V, 3.3A, 1.8R, TO-220AB Product overview: IRF720PBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 400V, 3.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 400V, 3.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF720PBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
MOSFET, Power;N-Ch;VDSS 400V;RDS(ON) 1.8 Ohms;ID 3.3A;TO-220AB;PD 50W;VGS +/-20V - 70079031 - Allied Electronics, Inc.
Allied Electronics, Inc.
Fort Worth, TX, USA
MOSFET, Power;N-Ch;VDSS 400V;RDS(ON) 1.8 Ohms;ID 3.3A;TO-220AB;PD 50W;VGS +/-20V
70079031
MOSFET, Power;N-Ch;VDSS 400V;RDS(ON) 1.8 Ohms;ID 3.3A;TO-220AB;PD 50W;VGS +/-20V 70079031
MOSFET, Power;N-Ch;VDSS 400V;RDS(ON) 1.8 Ohms;ID 3.3A;TO-220AB;PD 50W;VGS +/-20V

MOSFET, Power;N-Ch;VDSS 400V;RDS(ON) 1.8 Ohms;ID 3.3A;TO-220AB;PD 50W;VGS +/-20V

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF720PBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF720PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF720PBF
MOSFET N-CH 400V 3.3A TO220AB

MOSFET N-CH 400V 3.3A TO220AB

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IRF720PBF
MOSFET IRF720PBF
MOSFET N-CH 400V HEXFET MOSFET

MOSFET N-CH 400V HEXFET MOSFET

Buy Now Datasheet
Transistor - 16357337 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
16357337
Transistor 16357337
POWER FIELD-EFFECT TRANSISTOR, 3.3A I(D), 400V, 1.8OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY

POWER FIELD-EFFECT TRANSISTOR, 3.3A I(D), 400V, 1.8OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Mosfet Transistor, N Channel, 3 A, 400 V, 1.8 Ohm, 10 V, 4 V Rohs Compliant Vishay - 38K2840 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, N Channel, 3 A, 400 V, 1.8 Ohm, 10 V, 4 V Rohs Compliant Vishay
38K2840
Mosfet Transistor, N Channel, 3 A, 400 V, 1.8 Ohm, 10 V, 4 V Rohs Compliant Vishay 38K2840
MOSFET Transistor, N Channel, 3 A, 400 V, 1.8 ohm, 10 V, 4 V RoHS Compliant: Yes

MOSFET Transistor, N Channel, 3 A, 400 V, 1.8 ohm, 10 V, 4 V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey ERSAELECTRONICS PTE. LTD. Allied Electronics, Inc. Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Radwell International Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 017487-IRF720PBF IRF720PBF IRF720PBF-ND 278-IRF720PBF 70079031 IRF720PBF IRF720PBF 16357337 38K2840
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF720PBF Single FETs, MOSFETs Single FETs, MOSFETs N-Channel 400V 3.3A MOSFET Transistor MOSFET, Power;N-Ch;VDSS 400V;RDS(ON) 1.8 Ohms;ID 3.3A;TO-220AB;PD 50W;VGS +/-20V Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Transistor Mosfet Transistor, N Channel, 3 A, 400 V, 1.8 Ohm, 10 V, 4 V Rohs Compliant Vishay
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel N-Channel N-Channel
V(BR)DSS 400 volts 400 volts 400 volts
PD 50000 milliwatts 50000 milliwatts 50000 milliwatts 50000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 C (-67 F)
Package Type TO-220; SOT3; TO-220AB TO-220; TO-220-3 TO-220; TO-220-3 TO-220 TO-220; TO-220-3 TO-3
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