Manufacturer: Vishay
Win Source Part Number: 017487-IRF720PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 50W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 400V
Continuous Drain Current at 25°C: 3.3A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 20nC @ 10V
Max Input Capacitance: 410pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.8 Ohm @ 2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Sufficient
POWER FIELD-EFFECT TRANSISTOR, 3.3A I(D), 400V, 1.8OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY
MOSFET N-CH 400V 3.3A TO220AB
N-Channel 400V 3.3A (Tc) 50W (Tc) Through Hole TO-220AB
MOSFET Transistor, N Channel, 3 A, 400 V, 1.8 ohm, 10 V, 4 V RoHS Compliant: Yes
MOSFET, Power;N-Ch;VDSS 400V;RDS(ON) 1.8 Ohms;ID 3.3A;TO-220AB;PD 50W;VGS +/-20V
MOSFET N-CH 400V 3.3A TO220AB
| Win Source Electronics | Radwell International | ODG (Origin Data Global) | DigiKey | Newark, An Avnet Company | Allied Electronics, Inc. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 017487-IRF720PBF | 16357337 | IRF720PBF | IRF720PBF-ND | 38K2840 | 70079031 | IRF720PBF | IRF720PBF |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF720PBF | Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | Mosfet Transistor, N Channel, 3 A, 400 V, 1.8 Ohm, 10 V, 4 V Rohs Compliant Vishay | MOSFET, Power;N-Ch;VDSS 400V;RDS(ON) 1.8 Ohms;ID 3.3A;TO-220AB;PD 50W;VGS +/-20V | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | |||
| V(BR)DSS | 400 volts | 400 volts | 400 volts | |||||
| PD | 50000 milliwatts | 50000 milliwatts | 50000 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||||
| Package Type | TO-220; SOT3; TO-220AB | TO-220; TO-220-3 | TO-220; TO-220-3 | TO-3 | TO-220 | TO-220; TO-220-3 |
