Vishay Intertechnology, Inc. FETs - Single - IRC630PBF IRC630PBF

Description
Manufacturer: Vishay Siliconix Win Source Part Number: 1186850-IRC630PBF Packaging: Tube Mounting Style: Through Hole Technology: MOSFET FET Feature: Current Sensing Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220-5 Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-220-5 Power Dissipation (Maximum): 74W Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 200V Id - Continuous Drain Current: 9A Rds On (Maximum) at Id, Vgs: 400mOhm at 5.4A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 43nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 800pF at 25V
Request a Quote
Description
Manufacturer: Vishay Siliconix Win Source Part Number: 1186850-IRC630PBF Packaging: Tube Mounting Style: Through Hole Technology: MOSFET FET Feature: Current Sensing Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220-5 Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-220-5 Power Dissipation (Maximum): 74W Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 200V Id - Continuous Drain Current: 9A Rds On (Maximum) at Id, Vgs: 400mOhm at 5.4A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 43nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 800pF at 25V
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
FETs - Single - IRC630PBF - 1186850-IRC630PBF - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IRC630PBF
1186850-IRC630PBF
FETs - Single - IRC630PBF 1186850-IRC630PBF
Manufacturer: Vishay Siliconix Win Source Part Number: 1186850-IRC630PBF Packaging: Tube Mounting Style: Through Hole Technology: MOSFET FET Feature: Current Sensing Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220-5 Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-220-5 Power Dissipation (Maximum): 74W Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 200V Id - Continuous Drain Current: 9A Rds On (Maximum) at Id, Vgs: 400mOhm at 5.4A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 43nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 800pF at 25V

Manufacturer: Vishay Siliconix
Win Source Part Number: 1186850-IRC630PBF
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
FET Feature: Current Sensing
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220-5
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-220-5
Power Dissipation (Maximum): 74W
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 200V
Id - Continuous Drain Current: 9A
Rds On (Maximum) at Id, Vgs: 400mOhm at 5.4A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 43nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 800pF at 25V

Buy Now
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRC630PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRC630PBF
MOSFET N-CH 200V 9A TO220-5

MOSFET N-CH 200V 9A TO220-5

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Power MOSFET RF Transistors
Product Number 1186850-IRC630PBF IRC630PBF
Product Name FETs - Single - IRC630PBF Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel
V(BR)DSS 200 volts
QG 43 nC
PD 74000 milliwatts
Unlock Full Specs
to access all available technical data