Vishay Precision Group mmW Power Amplifier CHA7455-99F/00

Description
The CHA7455-99F is a four-stage High Power Amplifier operating between 39.5 and 42.5 GHz and providing more than 8W of saturated output power and 24% of power added efficiency. The typical power supply is 20V/290mA (quiescent current). For these supply conditions, the CHA7455-99F provides a junction temperature below 160°C, even in saturation. The circuit is manufactured on a space evaluated 0.15μm gate length GaN-on-SiC HEMT process and is available in bare die form. It is well suited for SATCOM downlink and 5G applications
Request a Quote Datasheet
Description
The CHA7455-99F is a four-stage High Power Amplifier operating between 39.5 and 42.5 GHz and providing more than 8W of saturated output power and 24% of power added efficiency. The typical power supply is 20V/290mA (quiescent current). For these supply conditions, the CHA7455-99F provides a junction temperature below 160°C, even in saturation. The circuit is manufactured on a space evaluated 0.15μm gate length GaN-on-SiC HEMT process and is available in bare die form. It is well suited for SATCOM downlink and 5G applications
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
mmW Power Amplifier - CHA7455-99F/00 - Richardson RFPD
Downers Grove, IL, United States
mmW Power Amplifier
CHA7455-99F/00
mmW Power Amplifier CHA7455-99F/00
The CHA7455-99F is a four-stage High Power Amplifier operating between 39.5 and 42.5 GHz and providing more than 8W of saturated output power and 24% of power added efficiency. The typical power supply is 20V/290mA (quiescent current). For these supply conditions, the CHA7455-99F provides a junction temperature below 160°C, even in saturation. The circuit is manufactured on a space evaluated 0.15μm gate length GaN-on-SiC HEMT process and is available in bare die form. It is well suited for SATCOM downlink and 5G applications

The CHA7455-99F is a four-stage High Power Amplifier operating between 39.5 and 42.5 GHz and providing more than 8W of saturated output power and 24% of power added efficiency. The typical power supply is 20V/290mA (quiescent current). For these supply conditions, the CHA7455-99F provides a junction temperature below 160°C, even in saturation. The circuit is manufactured on a space evaluated 0.15μm gate length GaN-on-SiC HEMT process and is available in bare die form. It is well suited for SATCOM downlink and 5G applications

Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category RF Amplifiers
Product Number CHA7455-99F/00
Product Name mmW Power Amplifier
Amplifier Type Power Amplifier
Unlock Full Specs
to access all available technical data

Similar Products

Low Noise Amplifiers - NLA-500-18000-40-30 - kTB Solutions
Specs
Amplifier Type Low Noise Amplifier
Frequency Range 500 to 18000 MHz
Minimum Gain 40 dB
View Details
RF Amplifiers - SE5003L2-R - 894132-SE5003L2-R - Win Source Electronics
Specs
Applications RF Microwave
Package Type Surface Mount; 20-QFN (4x4)
View Details
3 suppliers
Low Phase Noise Amplifiers - HX2410 - Maury Microwave
Specs
Amplifier Type Low Noise Amplifier
Frequency Range 5 to 500 MHz
View Details
3 - 30 GHz Wideband Low Noise Amplifier - AMM-9861PSM - Marki Microwave LLC
Specs
Amplifier Type Low Noise Amplifier
Frequency Range 3000 to 30000 MHz
Package Type Surface Mount; surface-mount
View Details