Vishay Precision Group RF & MW Power Amplifier CHA6005-QEG/20

Description
8-12 GHz High Power Amplifier GaAs Monolithic Microwave IC. The CHA6005-QEG is a high power amplifier monolithic circuit, which integrates two stages and produces 31.5dBm output power associated to a high power added efficiency of 33%. It is designed for a wide range of applications, from profesional to commercial communications systems. The circuit is manufactured with a pHEMT process, 0.25um gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in RoHS compliant SMD package.
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Description
8-12 GHz High Power Amplifier GaAs Monolithic Microwave IC. The CHA6005-QEG is a high power amplifier monolithic circuit, which integrates two stages and produces 31.5dBm output power associated to a high power added efficiency of 33%. It is designed for a wide range of applications, from profesional to commercial communications systems. The circuit is manufactured with a pHEMT process, 0.25um gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in RoHS compliant SMD package.
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Suppliers

Company
Product
Description
Supplier Links
RF & MW Power Amplifier - CHA6005-QEG/20 - Richardson RFPD
Downers Grove, IL, United States
RF & MW Power Amplifier
CHA6005-QEG/20
RF & MW Power Amplifier CHA6005-QEG/20
8-12 GHz High Power Amplifier GaAs Monolithic Microwave IC. The CHA6005-QEG is a high power amplifier monolithic circuit, which integrates two stages and produces 31.5dBm output power associated to a high power added efficiency of 33%. It is designed for a wide range of applications, from profesional to commercial communications systems. The circuit is manufactured with a pHEMT process, 0.25um gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in RoHS compliant SMD package.

8-12 GHz High Power Amplifier GaAs Monolithic Microwave IC. The CHA6005-QEG is a high power amplifier monolithic circuit, which integrates two stages and produces 31.5dBm output power associated to a high power added efficiency of 33%. It is designed for a wide range of applications, from profesional to commercial communications systems. The circuit is manufactured with a pHEMT process, 0.25um gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in RoHS compliant SMD package.

Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category RF Amplifiers
Product Number CHA6005-QEG/20
Product Name RF & MW Power Amplifier
Amplifier Type Power Amplifier
Frequency Range 8000 to 12000 MHz
Maximum Gain 19.5 dB
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