Vishay Precision Group Phototransistors BPW77NB

Description
Phototransistors TO-18 450-1080nm +/-10 deg
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Product
Description
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Sheung Wan, Hong Kong
Phototransistors
BPW77NB
Phototransistors BPW77NB
Phototransistors TO-18 450-1080nm +/-10 deg

Phototransistors TO-18 450-1080nm +/-10 deg

Supplier's Site Datasheet
Sensors, Transducers - Optical Sensors - Phototransistors - BPW77NB - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Sensors, Transducers - Optical Sensors - Phototransistors
BPW77NB
Sensors, Transducers - Optical Sensors - Phototransistors BPW77NB
PHOTOTRANSISTOR 450 TO 1080 NM

PHOTOTRANSISTOR 450 TO 1080 NM

Supplier's Site
 - 7082810 - RS Components, Ltd.
Corby, Northants, United Kingdom
The BPW77NA and BPW77NB series, from Vishay Semiconductor, are a range of silicon NPN phototransistors. They are in hermetically sealed TO-18 packages with a glass lens. The BPW77NA and BPW77NB phototransistors are sensitive to both visible and near IR radiation. They are ideal for use as detectors within electronic control and drive circuits. Features of the BPW77NA and BPW77NB phototransistors:. TO-18 package. 4.7mm diameted. Through-hole mounted. High photo sensitivity. High radiant sensitivity. Fast response times. Operating temperature: -40 to +125 °C Spectrums Detected = Infrared, Visible Light Typical Fall Time = 5µs Typical Rise Time = 6µs Number of Channels = 1 Maximum Light Current = 20000µA Maximum Dark Current = 100nA Angle of Half Sensitivity = 20 ° Polarity = NPN Number of Pins = 3 Mounting Type = Through Hole

The BPW77NA and BPW77NB series, from Vishay Semiconductor, are a range of silicon NPN phototransistors. They are in hermetically sealed TO-18 packages with a glass lens. The BPW77NA and BPW77NB phototransistors are sensitive to both visible and near IR radiation. They are ideal for use as detectors within electronic control and drive circuits.
Features of the BPW77NA and BPW77NB phototransistors:. TO-18 package. 4.7mm diameted. Through-hole mounted. High photo sensitivity. High radiant sensitivity. Fast response times. Operating temperature: -40 to +125 °C
Spectrums Detected = Infrared, Visible Light
Typical Fall Time = 5µs
Typical Rise Time = 6µs
Number of Channels = 1
Maximum Light Current = 20000µA
Maximum Dark Current = 100nA
Angle of Half Sensitivity = 20 °
Polarity = NPN
Number of Pins = 3
Mounting Type = Through Hole

Supplier's Site
 - 7082810P - RS Components, Ltd.
Corby, Northants, United Kingdom
The BPW77NA and BPW77NB series, from Vishay Semiconductor, are a range of silicon NPN phototransistors. They are in hermetically sealed TO-18 packages with a glass lens. The BPW77NA and BPW77NB phototransistors are sensitive to both visible and near IR radiation. They are ideal for use as detectors within electronic control and drive circuits. Features of the BPW77NA and BPW77NB phototransistors:. TO-18 package. 4.7mm diameted. Through-hole mounted. High photo sensitivity. High radiant sensitivity. Fast response times. Operating temperature: -40 to +125 °C Spectrums Detected = Infrared, Visible Light Typical Fall Time = 5µs Typical Rise Time = 6µs Number of Channels = 1 Maximum Light Current = 20000µA Maximum Dark Current = 100nA Angle of Half Sensitivity = 20 ° Polarity = NPN Number of Pins = 3 Mounting Type = Through Hole Delivery on production packaging - Bag. This product is non-returnable.

The BPW77NA and BPW77NB series, from Vishay Semiconductor, are a range of silicon NPN phototransistors. They are in hermetically sealed TO-18 packages with a glass lens. The BPW77NA and BPW77NB phototransistors are sensitive to both visible and near IR radiation. They are ideal for use as detectors within electronic control and drive circuits.
Features of the BPW77NA and BPW77NB phototransistors:. TO-18 package. 4.7mm diameted. Through-hole mounted. High photo sensitivity. High radiant sensitivity. Fast response times. Operating temperature: -40 to +125 °C
Spectrums Detected = Infrared, Visible Light
Typical Fall Time = 5µs
Typical Rise Time = 6µs
Number of Channels = 1
Maximum Light Current = 20000µA
Maximum Dark Current = 100nA
Angle of Half Sensitivity = 20 °
Polarity = NPN
Number of Pins = 3
Mounting Type = Through Hole
Delivery on production packaging - Bag. This product is non-returnable.

Supplier's Site
 - 1451931 - RS Components, Ltd.
Corby, Northants, United Kingdom
Phototransistor Chip Silicon NPN 850nm - Optocouplers, Photodetectors & Photointerrupters - Phototransistors

Phototransistor Chip Silicon NPN 850nm - Optocouplers, Photodetectors & Photointerrupters - Phototransistors

Supplier's Site
Thief River Falls, MN, United States
Phototransistors
751-1021-ND
Phototransistors 751-1021-ND
Phototransistors 850nm Top View TO-206AA, TO-18-3 Metal Can

Phototransistors 850nm Top View TO-206AA, TO-18-3 Metal Can

Supplier's Site Datasheet

Technical Specifications

  VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited RS Components, Ltd. DigiKey
Product Category Phototransistors Phototransistors Phototransistors Phototransistors
Product Number BPW77NB BPW77NB 7082810 751-1021-ND
Product Name Phototransistors Sensors, Transducers - Optical Sensors - Phototransistors Phototransistors
Phototransistor Type Phototransistor Phototransistor Phototransistor
Mounting Option Through Hole Through Hole Plugin
Peak Wavelength 850 nm (8500 Å) 850 nm (8500 Å)
Collector Current 50 milliamps 20 milliamps
Collector Dark Current 100 nA 100 nA
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