VBsemi Electronics Co. Ltd. Transistors VBZ2N7002

Description
60V 250mA 2.8Ω@10V,0.25A 1 N-Channel SOT-23 MOSFETs ROHS
  • Transistors - VBZ2N7002 - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote
Description
60V 250mA 2.8Ω@10V,0.25A 1 N-Channel SOT-23 MOSFETs ROHS
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Transistors - VBZ2N7002 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
VBZ2N7002
Transistors VBZ2N7002
60V 250mA 2.8Ω@10V,0.25A 1 N-Channel SOT-23 MOSFETs ROHS

60V 250mA 2.8Ω@10V,0.25A 1 N-Channel SOT-23 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number VBZ2N7002
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

Bipolar Transistors - 1222362 - RS Components, Ltd.
RS Components, Ltd.
Bipolar Transistors
1222362
Specs
Transistor Type BJT
Polarity PNP
Package Type SOT23; Sot-23
View Details
- LM194H-MCP - Rochester Electronics
Texas Instruments
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
LM194H-MCP
Specs
Polarity NPN
View Details
2 suppliers
Current Collector high-performance aviation current collector DHK160-3-90A for an aerospace - - JiuJiang Ingiant Technology Co., Ltd.
JiuJiang Ingiant Technology Co., Ltd.
Current Collector high-performance aviation current collector DHK160-3-90A for an aerospace
View Details
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMZHN120R060M1T - AIMZHN120R060M1T - Infineon Technologies AG
Infineon Technologies AG
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMZHN120R060M1T
AIMZHN120R060M1T
Specs
Transistor Type MOSFET
Polarity N-Channel; N
Transistor Technology / Material Silicon carbide
View Details