VBsemi Electronics Co. Ltd. Transistors VBM1206

Description
20V 100A 4mΩ@4.5V,100A 125W 1.5V@250uA 1 N-Channel ITO-220AB-3 MOSFETs ROHS
  • Transistors - VBM1206 - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote
Description
20V 100A 4mΩ@4.5V,100A 125W 1.5V@250uA 1 N-Channel ITO-220AB-3 MOSFETs ROHS
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Transistors - VBM1206 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
VBM1206
Transistors VBM1206
20V 100A 4mΩ@4.5V,100A 125W 1.5V@250uA 1 N-Channel ITO-220AB-3 MOSFETs ROHS

20V 100A 4mΩ@4.5V,100A 125W 1.5V@250uA 1 N-Channel ITO-220AB-3 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number VBM1206
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

Power MOSFETs - SuperFAP-E3 Model: FMH10N80E - Fuji Electric Corp. of America
Fuji Electric Corp. of America
Power MOSFETs
SuperFAP-E3 Model: FMH10N80E
Specs
Transistor Type Power-MOSFET
Package Type TO-3P(Q)
Transistor Grade / Operating Range Commercial; Industrial; Automotive
View Details
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMDQ75R025M2H - AIMDQ75R025M2H - Infineon Technologies AG
Infineon Technologies AG
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMDQ75R025M2H
AIMDQ75R025M2H
Specs
Transistor Type MOSFET
Polarity N-Channel; N
Transistor Technology / Material Silicon carbide
View Details
MOSFETs - 1219414 - RS Components, Ltd.
RS Components, Ltd.
MOSFETs
1219414
Specs
Transistor Type MOSFET
Polarity P-Channel
Package Type SOT23; Sot-23
View Details
45 - 1218 MHz, 36dB, 12V, GaAs pHEMT-MESFET, Edge QAM MCM - RFAM3620 - Qorvo
Qorvo
45 - 1218 MHz, 36dB, 12V, GaAs pHEMT-MESFET, Edge QAM MCM
RFAM3620
Specs
Transistor Type MESFET; HEMT; PHEMT
Transistor Technology / Material GaAs
Package Type SMD
View Details