VBsemi Electronics Co. Ltd. Transistors VBFB2317

Description
30V 40A 18mΩ@10V,40A 40W 2.5V@250uA 1 Piece P-Channel TO-251 MOSFETs ROHS
  • Transistors - VBFB2317 - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
30V 40A 18mΩ@10V,40A 40W 2.5V@250uA 1 Piece P-Channel TO-251 MOSFETs ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - VBFB2317 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
VBFB2317
Transistors VBFB2317
30V 40A 18mΩ@10V,40A 40W 2.5V@250uA 1 Piece P-Channel TO-251 MOSFETs ROHS

30V 40A 18mΩ@10V,40A 40W 2.5V@250uA 1 Piece P-Channel TO-251 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number VBFB2317
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

IGBT - 444060 - Radwell International
Fuji Electric Corp. of America
IGBT
2MBI25L-120
Specs
Transistor Type IGBT
View Details
60 V, 1 A NPN medium power transistors - BC55-10PA-QX - Nexperia B.V.
Nexperia B.V.
60 V, 1 A NPN medium power transistors
BC55-10PA-QX
Specs
Package Type SOT1061 SOT1061
View Details
2 suppliers
Discrete Semiconductor Products - Transistors - IGBTs - AIHD03N60RFATMA1 - Shenzhen Shengyu Electronics Technology Limited
Infineon Technologies AG
Discrete Semiconductor Products - Transistors - IGBTs
AIHD03N60RFATMA1
Specs
Transistor Type IGBT
View Details
Transistor - 8220858 - Radwell International
Allen-Bradley / Rockwell Automation
Transistor
1336-QOUT-SP12B
View Details