VBsemi Electronics Co. Ltd. Transistors VBE2338

Description
30V 26A 52mΩ@4.5V,8A 25W 2.5V@250uA 1 Piece P-Channel TO-252-2 MOSFETs ROHS
  • Transistors - VBE2338 - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
30V 26A 52mΩ@4.5V,8A 25W 2.5V@250uA 1 Piece P-Channel TO-252-2 MOSFETs ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - VBE2338 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
VBE2338
Transistors VBE2338
30V 26A 52mΩ@4.5V,8A 25W 2.5V@250uA 1 Piece P-Channel TO-252-2 MOSFETs ROHS

30V 26A 52mΩ@4.5V,8A 25W 2.5V@250uA 1 Piece P-Channel TO-252-2 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number VBE2338
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

1150A IGBT MODULE FOR ONE PHASE - SK-H1-QOUT-D1K1 - Allen-Bradley / Rockwell Automation
Allen-Bradley / Rockwell Automation
1150A IGBT MODULE FOR ONE PHASE
SK-H1-QOUT-D1K1
Specs
Transistor Type IGBT
View Details
Current Collector high-performance aviation current collector DHK160-3-90A for an aerospace - - JiuJiang Ingiant Technology Co., Ltd.
JiuJiang Ingiant Technology Co., Ltd.
Current Collector high-performance aviation current collector DHK160-3-90A for an aerospace
View Details
Single Bipolar Transistors - 1727-2PB710ARL-QVLTR-ND - DigiKey
Nexperia B.V.
Single Bipolar Transistors
2PB710ARL-QVL
Specs
Polarity PNP
Package Type SOT23; TO-236-3, SC-59, SOT-23-3
Transistor Grade / Operating Range Automotive
View Details
IGBT Module - 121760766 - Radwell International
Fuji Electric Corp. of America
IGBT Module
7MBR25SA120-55
Specs
Transistor Type IGBT
View Details