VBsemi Electronics Co. Ltd. Transistors VBE1101M

Description
100V 15A 114mΩ@10V,3A 3W 2.5V@250uA 1 N-Channel TO-252 MOSFETs ROHS
  • Transistors - VBE1101M - ODG (Origin Data Global)
    ODG (Origin Data Global)
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Description
100V 15A 114mΩ@10V,3A 3W 2.5V@250uA 1 N-Channel TO-252 MOSFETs ROHS
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Transistors - VBE1101M - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
VBE1101M
Transistors VBE1101M
100V 15A 114mΩ@10V,3A 3W 2.5V@250uA 1 N-Channel TO-252 MOSFETs ROHS

100V 15A 114mΩ@10V,3A 3W 2.5V@250uA 1 N-Channel TO-252 MOSFETs ROHS

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Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number VBE1101M
Product Name Transistors
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