VBsemi Electronics Co. Ltd. Transistors TK10A80W-VB

Description
800V 9A 540mΩ@10V 4.5V 1 N-Channel TO-220F MOSFETs ROHS
  • Transistors - TK10A80W-VB - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
800V 9A 540mΩ@10V 4.5V 1 N-Channel TO-220F MOSFETs ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - TK10A80W-VB - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
TK10A80W-VB
Transistors TK10A80W-VB
800V 9A 540mΩ@10V 4.5V 1 N-Channel TO-220F MOSFETs ROHS

800V 9A 540mΩ@10V 4.5V 1 N-Channel TO-220F MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number TK10A80W-VB
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

DC - 18 GHz, 12 Watt Discrete Power GaN on SiC HEMT - TGF2023-2-02 - Qorvo
Qorvo
DC - 18 GHz, 12 Watt Discrete Power GaN on SiC HEMT
TGF2023-2-02
Specs
Transistor Type HEMT
Transistor Technology / Material GaN on SiC
Package Type Die
View Details
4 suppliers
Advanced Linear Devices, Inc.
MOSFET
ALD310504SAL
Specs
Transistor Type MOSFET
View Details
IGBT - 436417 - Radwell International
Fuji Electric Corp. of America
IGBT
7MBR50NF-060
Specs
Transistor Type IGBT
View Details
TRANSISTORS - Transistors (BJT) - Single - 2SA1624E-AA - 855050-2SA1624E-AA - Win Source Electronics
Rochester Electronics
TRANSISTORS - Transistors (BJT) - Single - 2SA1624E-AA
2SA1624E-AA
Specs
Package Type SOT3
View Details