VBsemi Electronics Co. Ltd. Transistors SiHU6N80E-VB

Description
800V 6A 850mΩ@10V 4V 1 N-Channel TO-251 MOSFETs ROHS
  • Transistors - SiHU6N80E-VB - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
800V 6A 850mΩ@10V 4V 1 N-Channel TO-251 MOSFETs ROHS

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Transistors - SiHU6N80E-VB - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
SiHU6N80E-VB
Transistors SiHU6N80E-VB
800V 6A 850mΩ@10V 4V 1 N-Channel TO-251 MOSFETs ROHS

800V 6A 850mΩ@10V 4V 1 N-Channel TO-251 MOSFETs ROHS

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Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number SiHU6N80E-VB
Product Name Transistors
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