VBsemi Electronics Co. Ltd. Transistors SI2318DS-T1-GE3-VB

Description
30V 6.5A 1.7W 30mΩ@10V,3.2A 2V@250uA 1 N-Channel SOT-23 MOSFETs ROHS
  • Transistors - SI2318DS-T1-GE3-VB - ODG (Origin Data Global)
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Description
30V 6.5A 1.7W 30mΩ@10V,3.2A 2V@250uA 1 N-Channel SOT-23 MOSFETs ROHS
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Transistors - SI2318DS-T1-GE3-VB - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
SI2318DS-T1-GE3-VB
Transistors SI2318DS-T1-GE3-VB
30V 6.5A 1.7W 30mΩ@10V,3.2A 2V@250uA 1 N-Channel SOT-23 MOSFETs ROHS

30V 6.5A 1.7W 30mΩ@10V,3.2A 2V@250uA 1 N-Channel SOT-23 MOSFETs ROHS

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Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number SI2318DS-T1-GE3-VB
Product Name Transistors
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