VBsemi Electronics Co. Ltd. Transistors SI2308DS-T1-GE3-VB

Description
60V 3.1A 1.66W 85mΩ@10V,1.9A 3V@250uA 1 N-Channel SOT-23 MOSFETs ROHS
  • Transistors - SI2308DS-T1-GE3-VB - ODG (Origin Data Global)
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Description
60V 3.1A 1.66W 85mΩ@10V,1.9A 3V@250uA 1 N-Channel SOT-23 MOSFETs ROHS
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Transistors - SI2308DS-T1-GE3-VB - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
SI2308DS-T1-GE3-VB
Transistors SI2308DS-T1-GE3-VB
60V 3.1A 1.66W 85mΩ@10V,1.9A 3V@250uA 1 N-Channel SOT-23 MOSFETs ROHS

60V 3.1A 1.66W 85mΩ@10V,1.9A 3V@250uA 1 N-Channel SOT-23 MOSFETs ROHS

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Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number SI2308DS-T1-GE3-VB
Product Name Transistors
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