VBsemi Electronics Co. Ltd. Transistors RU6H10P-VB

Description
650V 12A 680mΩ@10V 1 N-Channel TO-220F MOSFETs ROHS
Description
650V 12A 680mΩ@10V 1 N-Channel TO-220F MOSFETs ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - RU6H10P-VB - ODG (Origin Data Global)
Shenzhen, China
Transistors
RU6H10P-VB
Transistors RU6H10P-VB
650V 12A 680mΩ@10V 1 N-Channel TO-220F MOSFETs ROHS

650V 12A 680mΩ@10V 1 N-Channel TO-220F MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number RU6H10P-VB
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

IGBT - 48591612 - Radwell International
Fuji Electric Corp. of America
Specs
Transistor Type IGBT
View Details
PRECISION P-CHANNEL EPAD® MOSFET ARRAY QUAD ZERO THRESHOLD™ MATCHED PAIR - ALD310700PCL - Advanced Linear Devices, Inc.
Specs
Transistor Type MOSFET
Polarity P-Channel
Package Type PDIP16
View Details
4 suppliers
1150A IGBT MODULE FOR ONE PHASE - SK-H1-QOUT-D1K1 - Allen-Bradley / Rockwell Automation
Allen-Bradley / Rockwell Automation
Specs
Transistor Type IGBT
View Details
Bipolar Transistors - 1219424 - RS Components, Ltd.
Specs
Transistor Type BJT
Polarity NPN
Package Type Sot-89
View Details