VBsemi Electronics Co. Ltd. Triode/MOS Tube/Transistor >> MOSFETs RU30L30M-VB

Description
30V 35A 7.5mΩ@10V,14.4A 52.1W 2.8V@250uA P Channel QFN-8(3x3) MOSFETs ROHS
  • Transistors - RU30L30M-VB - ODG (Origin Data Global)
    ODG (Origin Data Global)
Datasheet
Description
30V 35A 7.5mΩ@10V,14.4A 52.1W 2.8V@250uA P Channel QFN-8(3x3) MOSFETs ROHS
Datasheet

Suppliers

Company
Product
Description
Supplier Links
LCSC Electronics Technology (HK) Limited
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
RU30L30M-VB
Triode/MOS Tube/Transistor >> MOSFETs RU30L30M-VB
30V 35A 7.5mΩ@10V,14.4A 52.1W 2.8V@250uA P Channel QFN-8(3x3) MOSFETs ROHS

30V 35A 7.5mΩ@10V,14.4A 52.1W 2.8V@250uA P Channel QFN-8(3x3) MOSFETs ROHS

Supplier's Site Datasheet
Transistors - RU30L30M-VB - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
RU30L30M-VB
Transistors RU30L30M-VB
30V 35A 7.5mΩ@10V,14.4A 52.1W 2.8V@250uA 1 Piece P-Channel QFN-8(3x3) MOSFETs ROHS

30V 35A 7.5mΩ@10V,14.4A 52.1W 2.8V@250uA 1 Piece P-Channel QFN-8(3x3) MOSFETs ROHS

Supplier's Site

Technical Specifications

  LCSC Electronics Technology (HK) Limited ODG (Origin Data Global)
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors
Product Number RU30L30M-VB RU30L30M-VB
Product Name Triode/MOS Tube/Transistor >> MOSFETs Transistors
Polarity P-Channel
V(BR)DSS 30 volts
VGS(off) 2.8 volts
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