VBsemi Electronics Co. Ltd. Transistors RU30L30M-VB

Description
30V 35A 7.5mΩ@10V,14.4A 52.1W 2.8V@250uA 1 Piece P-Channel QFN-8(3x3) MOSFETs ROHS
  • Transistors - RU30L30M-VB - ODG (Origin Data Global)
    ODG (Origin Data Global)
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Description
30V 35A 7.5mΩ@10V,14.4A 52.1W 2.8V@250uA 1 Piece P-Channel QFN-8(3x3) MOSFETs ROHS
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Transistors - RU30L30M-VB - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
RU30L30M-VB
Transistors RU30L30M-VB
30V 35A 7.5mΩ@10V,14.4A 52.1W 2.8V@250uA 1 Piece P-Channel QFN-8(3x3) MOSFETs ROHS

30V 35A 7.5mΩ@10V,14.4A 52.1W 2.8V@250uA 1 Piece P-Channel QFN-8(3x3) MOSFETs ROHS

Supplier's Site
LCSC Electronics Technology (HK) Limited
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
RU30L30M-VB
Triode/MOS Tube/Transistor >> MOSFETs RU30L30M-VB
30V 35A 7.5mΩ@10V,14.4A 52.1W 2.8V@250uA P Channel QFN-8(3x3) MOSFETs ROHS

30V 35A 7.5mΩ@10V,14.4A 52.1W 2.8V@250uA P Channel QFN-8(3x3) MOSFETs ROHS

Supplier's Site Datasheet

Technical Specifications

  ODG (Origin Data Global) LCSC Electronics Technology (HK) Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number RU30L30M-VB RU30L30M-VB
Product Name Transistors Triode/MOS Tube/Transistor >> MOSFETs
Polarity P-Channel
V(BR)DSS 30 volts
VGS(off) 2.8 volts
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