VBsemi Electronics Co. Ltd. Transistors RJJ0606JPD-VB

Description
60V 50A 20mΩ@10V 1 Piece P-Channel TO-252 MOSFETs ROHS
Description
60V 50A 20mΩ@10V 1 Piece P-Channel TO-252 MOSFETs ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors RJJ0606JPD-VB
60V 50A 20mΩ@10V 1 Piece P-Channel TO-252 MOSFETs ROHS

60V 50A 20mΩ@10V 1 Piece P-Channel TO-252 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number RJJ0606JPD-VB
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

CSD19535KCS 100V, N-Channel NexFET™ Power MOSFET - CSD19535KCS - Texas Instruments
Specs
Transistor Type Power-MOSFET
Polarity N-Channel
Package Type TO-220
View Details
8 suppliers
60 V, 350 mA N-channel Trench MOSFET - 2N7002BKVL - Nexperia B.V.
Specs
Transistor Type MOSFET
Package Type SOT23; SOT23 SOT23
View Details
9 suppliers
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMDQ75R040M1H - AIMDQ75R040M1H - Infineon Technologies AG
Specs
Transistor Type MOSFET
Polarity N-Channel; N
Transistor Technology / Material Silicon carbide
View Details
IGBT; IGBT+FWD; Molded; TO-3PL Case; 75A Collector; 230 W (Max.); 600V; +/-20V - 70212527 - Allied Electronics, Inc.
Specs
Transistor Type IGBT
Polarity N-Channel
View Details