VBsemi Electronics Co. Ltd. Transistors RFD10P03LSM-VB

Description
30V 38A 33mΩ@10V 1 Piece P-Channel TO-252 MOSFETs ROHS
Request a Quote
Description
30V 38A 33mΩ@10V 1 Piece P-Channel TO-252 MOSFETs ROHS
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Transistors RFD10P03LSM-VB
30V 38A 33mΩ@10V 1 Piece P-Channel TO-252 MOSFETs ROHS

30V 38A 33mΩ@10V 1 Piece P-Channel TO-252 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number RFD10P03LSM-VB
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

DC - 3.5 GHz, 100 Watt, 28 V GaN RF Power Transistor - TGF2929-FL - Qorvo
Specs
Transistor Technology / Material GaN
Package Type NI-360
Transistor Grade / Operating Range Military
View Details
4 suppliers
Igbt, Module, Dual N Channel, 1.2Kv, 1.6Ka; Continuous Collector Current Fuji Electric - 54W0199 - Newark, An Avnet Company
Specs
Transistor Type IGBT
Polarity N-Channel
Package Type TO-3
View Details
QUAD/DUAL N-CHANNEL ZERO THRESHOLD™ EPAD® PRECISION MATCHED PAIR MOSFET ARRAY - ALD110900ASAL - Advanced Linear Devices, Inc.
Specs
Transistor Type MOSFET
Polarity N-Channel
Package Type SOIC8
View Details
3 suppliers
45 V, 500 mA PNP general-purpose transistors - BC807-25W,115 - Nexperia B.V.
Specs
Transistor Type BJT
Polarity NPN
Package Type SC-70
View Details
8 suppliers