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Qorvo 500 Watt, 50 Volt, DC - 1.7 GHz, GaN RF Transistor QPD1016

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500 Watt, 50 Volt, DC - 1.7 GHz, GaN RF Transistor - QPD1016 - Qorvo
Greensboro, NC, United States
500 Watt, 50 Volt, DC - 1.7 GHz, GaN RF Transistor
QPD1016
500 Watt, 50 Volt, DC - 1.7 GHz, GaN RF Transistor QPD1016
The Qorvo QPD1016 is a 500 W (P3dB) pre-matched discrete GaN on SiC HEMT which operates from DC to 1.7 GHz and 50 V supply. The device is in an industry standard air cavity package and is ideally suited for IFF, avionics, military and civilian radar, and test instrumentation. The device can support pulsed and linear operations. ROHS compliant. Evaluation boards are available upon request.

The Qorvo QPD1016 is a 500 W (P3dB) pre-matched discrete GaN on SiC HEMT which operates from DC to 1.7 GHz and 50 V supply. The device is in an industry standard air cavity package and is ideally suited for IFF, avionics, military and civilian radar, and test instrumentation. The device can support pulsed and linear operations.

ROHS compliant.

Evaluation boards are available upon request.

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Technical Specifications

  Qorvo
Product Category RF Transistors
Product Number QPD1016
Product Name 500 Watt, 50 Volt, DC - 1.7 GHz, GaN RF Transistor
Transistor Technology / Material GaN
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