VBsemi Electronics Co. Ltd. Transistors MTP12N10E-VB

Description
100V 18A 92.2mΩ@10V,20A 105W 4V@250uA 1 N-Channel TO-220AB-3 MOSFETs ROHS
  • Transistors - MTP12N10E-VB - ODG (Origin Data Global)
    ODG (Origin Data Global)
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Description
100V 18A 92.2mΩ@10V,20A 105W 4V@250uA 1 N-Channel TO-220AB-3 MOSFETs ROHS
Request a Quote

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Transistors - MTP12N10E-VB - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
MTP12N10E-VB
Transistors MTP12N10E-VB
100V 18A 92.2mΩ@10V,20A 105W 4V@250uA 1 N-Channel TO-220AB-3 MOSFETs ROHS

100V 18A 92.2mΩ@10V,20A 105W 4V@250uA 1 N-Channel TO-220AB-3 MOSFETs ROHS

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Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number MTP12N10E-VB
Product Name Transistors
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