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Qorvo 750 V, 11 mohm SiC FET UJ4SC075011B7S

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750 V, 11 mohm SiC FET - UJ4SC075011B7S - Qorvo
Greensboro, NC, United States
750 V, 11 mohm SiC FET
UJ4SC075011B7S
750 V, 11 mohm SiC FET UJ4SC075011B7S
Qorvo's UJ4SC075011B7S is a 750 V, 11 mohm Gen 4 SiC FET. It is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device's standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjunction devices or SiC MOSFETs. Available in the D2PAK-7L package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive. AEC-Q101 qualified.

Qorvo's UJ4SC075011B7S is a 750 V, 11 mohm Gen 4 SiC FET. It is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device's standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjunction devices or SiC MOSFETs. Available in the D2PAK-7L package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.

AEC-Q101 qualified.

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Technical Specifications

  Qorvo
Product Category RF Transistors
Product Number UJ4SC075011B7S
Product Name 750 V, 11 mohm SiC FET
Transistor Technology / Material 750 V, 11 mohm SiC FET
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