VBsemi Electronics Co. Ltd. Transistors HFD4N50-VB

Description
650V 4.5A 1.8Ω@10V,4.5A 1 N-Channel TO-252 MOSFETs ROHS
  • Transistors - HFD4N50-VB - ODG (Origin Data Global)
    ODG (Origin Data Global)
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Description
650V 4.5A 1.8Ω@10V,4.5A 1 N-Channel TO-252 MOSFETs ROHS
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Transistors - HFD4N50-VB - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
HFD4N50-VB
Transistors HFD4N50-VB
650V 4.5A 1.8Ω@10V,4.5A 1 N-Channel TO-252 MOSFETs ROHS

650V 4.5A 1.8Ω@10V,4.5A 1 N-Channel TO-252 MOSFETs ROHS

Supplier's Site
LCSC Electronics Technology (HK) Limited
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
HFD4N50-VB
Triode/MOS Tube/Transistor >> MOSFETs HFD4N50-VB
650V 4.5A 1.8Ω@10V,4.5A N Channel TO-252 MOSFETs ROHS

650V 4.5A 1.8Ω@10V,4.5A N Channel TO-252 MOSFETs ROHS

Supplier's Site Datasheet

Technical Specifications

  ODG (Origin Data Global) LCSC Electronics Technology (HK) Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number HFD4N50-VB HFD4N50-VB
Product Name Transistors Triode/MOS Tube/Transistor >> MOSFETs
Polarity N-Channel
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