VBsemi Electronics Co. Ltd. Transistors FQD50N06-VB

Description
60V 50A 12mΩ@10V,50A 1 N-Channel TO-252 MOSFETs ROHS
Request a Quote
Description
60V 50A 12mΩ@10V,50A 1 N-Channel TO-252 MOSFETs ROHS
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Transistors - FQD50N06-VB - ODG (Origin Data Global)
Shenzhen, China
Transistors
FQD50N06-VB
Transistors FQD50N06-VB
60V 50A 12mΩ@10V,50A 1 N-Channel TO-252 MOSFETs ROHS

60V 50A 12mΩ@10V,50A 1 N-Channel TO-252 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number FQD50N06-VB
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

IGBT - 97646251 - Radwell International
Fuji Electric Corp. of America
Specs
Transistor Type IGBT
View Details
Single FETs, MOSFETs - 448-AIMCQ120R020M1TXTMA1TR-ND - DigiKey
Specs
Polarity N-Channel
Transistor Technology / Material Silicon Carbide
Package Type 22-PowerBSOP Module
View Details
MOSFETs - 1220228 - RS Components, Ltd.
RS Components, Ltd.
Specs
Transistor Type MOSFET
Polarity P-Channel
Package Type SOT26; Sot-26
View Details
DC - 4.0 GHz, 200 Watt Peak, 40 Watt Avg. Power, 50 Volt, GaN RF Power Transistor - TGF2819-FS - Qorvo
Specs
Transistor Technology / Material DC - 4.0 GHz, 200 Watt Peak, 40 Watt Avg. Power, 50 Volt, GaN RF Power Transistor
Package Type NI-360
Transistor Grade / Operating Range Military
View Details