VBsemi Electronics Co. Ltd. Transistors FDN8601-VB

Description
100V 2A 240mΩ@10V 1 N-Channel SOT-23 MOSFETs ROHS
  • Transistors - FDN8601-VB - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote
Description
100V 2A 240mΩ@10V 1 N-Channel SOT-23 MOSFETs ROHS
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Transistors - FDN8601-VB - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
FDN8601-VB
Transistors FDN8601-VB
100V 2A 240mΩ@10V 1 N-Channel SOT-23 MOSFETs ROHS

100V 2A 240mΩ@10V 1 N-Channel SOT-23 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number FDN8601-VB
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

QUAD/DUAL N-CHANNEL MATCHED PAIR MOSFET ARRAY - ALD1107SBL - Advanced Linear Devices, Inc.
Advanced Linear Devices, Inc.
QUAD/DUAL N-CHANNEL MATCHED PAIR MOSFET ARRAY
ALD1107SBL
Specs
Transistor Type MOSFET
Polarity P-Channel
Package Type SOIC14
View Details
3 suppliers
Bipolar Transistors - BJT - 2N3799 - Micross Components, Inc.
Micross Components, Inc.
Bipolar Transistors - BJT
2N3799
View Details
Igbt, Module, Dual N Channel, 1.2Kv, 1.8Ka; Continuous Collector Current Fuji Electric - 54W0209 - Newark, An Avnet Company
Fuji Electric Corp. of America
Igbt, Module, Dual N Channel, 1.2Kv, 1.8Ka; Continuous Collector Current Fuji Electric
2MBI1400VXB-120P-50
Specs
Transistor Type IGBT
Polarity N-Channel
Package Type TO-3
View Details
CSD19532Q5B 100V, 4.0 mOhm, SON5x6 N-Channel NexFET™ Power MOSFET - CSD19532Q5B - Texas Instruments
Texas Instruments
CSD19532Q5B 100V, 4.0 mOhm, SON5x6 N-Channel NexFET™ Power MOSFET
CSD19532Q5B
Specs
Transistor Type Power-MOSFET
Polarity N-Channel
Package Type SON5x6
View Details
8 suppliers